Influence of Mg ion concentration in ZrO2 gate dielectric layered silicon based MOS capacitors for memory applications: Thorough understanding of conduction processes

Bhanu, J. Udaya; Babu, Ganguli; Thangadurai, P.

doi:10.1016/j.mssp.2018.09.004

Cited by 8 publications

(2 citation statements)

References 55 publications

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“…Finally, this proposed apparent barrier increase with defect density is opposite to the trend observed with the overlap of neighboring potential fields. [74,92] This point is coherent with our considerations: while these works consider the ability of carriers to hop from full-site to empty-site, we consider the effect of space-charge on the emission barrier.…”

Section: Rk T R K T B Thsupporting

confidence: 71%

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Rusinowicz

Volpi

Parry

et al. 2022

Adv Funct Materials

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Advanced devices (for microelectronics, energy storage, power sourcing) are complex architectures of metals and dielectrics subjected to harsh mechanical stresses. The functional reliability of the embedded dielectrics is driven by their ability to preserve their electrical properties (such as leakage and breakdown). Accordingly, understanding the interplay between the mechanical and electrical behaviors of dielectric films is critical to predict the lifetime of functional devices. In this study, the effect of plastic deformation on the electrical conduction of an ultra‐low‐k dielectric film is elucidated by combining in situ advanced experiments and finite element modeling. Experimentally, “electrical‐nanoindentation” tests emphasize the strong correlation between electrical and mechanical failures (leakage degradation, breakdown, plasticity, cracking). These experiments also reveal a counterintuitive electrical conduction drop under high mechanical stresses. This phenomenon is reproduced numerically by correcting the Poole–Frenkel conduction law with a strain‐dependent factor, and described analytically in terms of space‐charge build‐up induced by the trapping of holes at the mechanically generated defects. A threshold strain is identified as the keystone relating this strain‐dependent conduction to the current line distribution within the dielectric. This study provides a new understanding of the mechanical/electrical couplings in dielectrics, which opens promising insights into reliability issues for advanced devices.

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Section: Rk T R K T B Thsupporting

confidence: 71%

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Rusinowicz

Volpi

Parry

et al. 2022

Adv Funct Materials

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“…Several works have been reported on electron beam evaporation; ZrO 2 /SiO 2 thin film was deposited on silica by dependence on structure. [109][110][111] Thermal evaporation.-This is a widely used technique for the deposition of thin film. In this process, an evaporant is pre-loaded into a container in vacuum ambient.…”

Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices

Devaray

Hatta

Wong

2022

J Mater Sci: Mater Electron

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Influence of Mg ion concentration in ZrO2 gate dielectric layered silicon based MOS capacitors for memory applications: Thorough understanding of conduction processes

Cited by 8 publications

References 55 publications

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Review—Gate Oxide Thin Films Based on Silicon Carbide

An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices

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