1996
DOI: 10.1016/0927-0256(96)00011-0
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Influence of microstructural disorder on the current transport behavior of varistor ceramics

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Cited by 35 publications
(34 citation statements)
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“…The grain boundary resistances determine varistor currents for voltages in the nonlinear breakdown voltage region of the electrical characteristics as well as in the linear pre-breakdown region. The resistance of the varistor at higher voltages becomes again Ohmic as it is essentially determined by grain bulk resistivity (Vojta et al, 1996).…”
Section: Introductionmentioning
confidence: 99%
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“…The grain boundary resistances determine varistor currents for voltages in the nonlinear breakdown voltage region of the electrical characteristics as well as in the linear pre-breakdown region. The resistance of the varistor at higher voltages becomes again Ohmic as it is essentially determined by grain bulk resistivity (Vojta et al, 1996).…”
Section: Introductionmentioning
confidence: 99%
“…Almost all of the models so far presented in the literature operate in 2-D planar geometry. They are based either on a Cartesian mesh representation (Vojta et al, 1996;Wen and Clarke, 1993) or on a Voronoi-type tessellation of the varistor sample (Bartkowiak et al, 1996a;Zhao et al, 2007). Given a microstructure representation, electrical transport can be modeled by means of an equivalent electrical circuit with voltage nodes and current branches associated with the grain centers and grain boundaries, respectively.…”
Section: Introductionmentioning
confidence: 99%
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