Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures

Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

“…After the repeated 20 s irradiation of the GA sample, the TAV signal diminished considerably and exceed the measuring range. It correlates with data obtained in [7]; this work reports of the decrease in the concentration of the centers with energy level at the forbidden band top half due to microwave annealing. Thirdly, the changes character at the monocrystalline wafers and at the epitaxial structures is different:…”

“…On our opinion, the changes of the deep level parameters are related to the structural-impurity alteration of a semiconductor near-surface region, caused by microwave treatment. Such alteration is earlier found out in [5][6][7]. Namely, according to [5,7], defects are gettered in a material surface layer after this MW irradiation.…”

“…In recent years, a number of papers are devoted to the new influence methods, such as ultrasonic treatment [3,4] or microwave (MW) electromagnetic irradiation [57]. For example, it is shown that MW treatment leads to relaxation of the internal mechanical strain of the Schottkybarrier GaAs structures [5], redistribution of the impurities [5,6], gettering of the point defects [7]. However, information about microwave influence on the structure defect parameters is practically unknown.…”

Temperature Measurements during Microwave Processing: The Significance of Thermocouple Effects

“…Microwave-processing studies of a range of ceramics have led to reports of material properties different from those attained using conventional heating. [1][2][3][4][5][6][7][8] Affected properties under investigation include density, porosity, strength, fracture toughness, electrical permittivity, thermal conductivity, and grain size. Although microwave effects are not yet well understood, they offer unique possibilities for processing ceramics with tailored microstructures for novel applications in engine components, lamp envelopes, substrates for microelectronic devices, and biomaterial implants for load bearing applications.…”

Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

“…The influence of microwave irradiation with vari ous durations and powers was considered in a number of studies [3][4][5][6]. Specifically, the influence of micro wave irradiation on defects states in the surface region of SiO 2 /GaAs semiconductor heterostructures and in n GaAs wafers was studied in [5,6].…”