Influence of molecular weight and film thickness on the glass transition temperature and coefficient of thermal expansion of supported ultrathin polymer films

Singh, Lovejeet; Ludovice, Peter J.; Henderson, Clifford L.

doi:10.1016/s0040-6090(03)01353-1

Cited by 127 publications

(144 citation statements)

References 21 publications

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“…49 The insulating low-k a-SiOC:H material investigated in this study, however, has a comparatively smaller coefficient of thermal expansion (∼10-15 × 10 −6 / • C) 44 and is typically deposited directly on a comparatively thick Si substrate. Despite being largely IR transparent, the Si substrate still exhibits a significant photothermal response due to absorption by free carriers, impurities, and defects.…”

Section: Methodsmentioning

confidence: 98%

Nanoscale Chemical-Mechanical Characterization of Nanoelectronic Low-kDielectric/Cu Interconnects

Lo¹,

Dazzi

Marcott³

et al. 2015

ECS J. Solid State Sci. Technol.

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Combined nanoscale chemical and mechanical property characterization has largely been limited by the inability to extend chemical structure identification techniques such as infrared (IR) absorption spectroscopy into the nanometer regime due to diffraction limitations. The recent development of atomic force microscope (AFM) based IR spectroscopy (AFM-IR) has now enabled infrared chemical spectroscopy with resolution well below the diffraction limit. However, the combination of AFM-IR with other AFM based techniques to achieve nanoscale chemical structure-mechanical property characterization has yet to be demonstrated. In this regard, we have combined AFM-IR chemical and contact resonance AFM (CR-AFM) mechanical measurements in the investigation of low dielectric constant (low-k) / Cu damascene structures fabricated using a 90 nm interconnect process technology. We show that the combined AFM-IR and CR-AFM results can be utilized to perform nanoscale chemical-mechanical characterization of both the nano-patterned metal and the low-k dielectric whose mechanical properties are sensitive to chemical modification by the interconnect fabrication process. The continued drive to seek and exploit new materials and phenomena at nanometer dimensions has increased the demand for metrologies capable of characterizing both chemical structure and physical properties at the nanoscale. The nanoelectronics industry in particular has identified metrologies capable of performing nanoscale structureproperty measurements on new materials and devices as an area of critical need in their industry technology roadmap.1,2 Such requirements for nanoscale physical property characterization have readily been met by the development of a range of scanned probe techniques capable of assessing the thermal, 3,4 mechanical, 5,6 and electrical 7,8 properties of materials at the nanoscale. 9 However, the development of nanoscale chemical structure metrologies has been hindered by the difficulty of scaling popular micron-scale techniques such as infrared (IR) absorption spectroscopy [10][11][12] into the nanometer regime due to diffraction limits defined by the Rayleigh equation.13,14 To overcome these limitations, a number of approaches combining optical spectroscopy with scanned probe microscopy (SPM) have been proposed and demonstrated. [13][14][15][16][17][18][19][20] Of these, the atomic force microscope (AFM) IR technique, which is based on photothermally induced resonance (PTIR), 21,22 has recently garnered significant interest due to a demonstrated spatial resolution of 25-100 nm, and a close correlation to micron-scale Fourier transform infrared (FTIR) spectroscopy. 13,14 This combination has resulted in the utilization of AFM-IR in a number of biological, 23-25 polymeric, 26-28 and semiconductor [29][30][31] applications. However, AFM-IR and related techniques have yet to be routinely combined with other AFM based techniques to achieve the ultimate goal of nanoscale structure-property characterization. In this regard, we provide a compelling...

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Section: Methodsmentioning

confidence: 98%

Nanoscale Chemical-Mechanical Characterization of Nanoelectronic Low-kDielectric/Cu Interconnects

Lo¹,

Dazzi

Marcott³

et al. 2015

ECS J. Solid State Sci. Technol.

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“…The glass-transition temperature ( T g ) was determined by fi nding the intersection between fi tted least square regression lines above and below this transition point ( Figure S1, Supporting Information). [ 32,33 ] The T g for iCVD PGMA fi lms used in this study was found to be 61.3 °C, indicating thermocompression bonding of substrates would be feasible above this temperature.…”

Section: Ellipsometric Characterization Of T G and Thermal Crosslinkimentioning

confidence: 72%

Wafer Scale Solventless Adhesive Bonding with iCVD Polyglycidylmethacrylate: Effects of Bonding Parameters on Adhesion Energies

Jeevendrakumar

Pascual

Bergkvist

2015

Adv Materials Inter

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heterogeneous 3D bonding of different materials, [8][9][10][11][12] in which temporary/permanent wafer bonding and wafer thinning processes are integral processes to realize such 3D architectures. [13][14][15] Polymers are the preferred adhesive materials due to their ease of handling, chemical and physical modifi cation, mild processing conditions, and compatibility with standard semiconductor processing. [ 5,16,17 ] Such adhesive fi lms are most commonly applied to wafer substrates by spin coating, owing to its low cost, simplicity, and high throughput. However, use of solvents poses certain limitations with substrate compatibility, solvent outgassing, and conformal coatings. This could result in void trapping at the interface and compromise the integrity and reliability of the formed bond. [ 5,17,18 ] Additional solvent bake-out and cure steps are needed to minimize such solvent effects, which increases processing time and can negatively impact the chemical/mechanical properties of the adhesive. [ 16 ] Deposition of polymers via gas-phase methods is an attractive alternative to negate issues with solvents and textured substrates. Among polymeric chemical vapor deposition (CVD) techniques, initiated CVD (iCVD) has gained signifi cant attention in the last decade, owing to its performance characteristics such as retention of polymer functionality, good conformity, and substrate insensitivity. [ 19,20 ] Unlike plasma-enhanced CVD, iCVD follows similar reaction mechanisms as bulk polymerization, in that linear, noncrosslinked polymer chains can be formed. [ 21 ] Recently, CVD polymer thin fi lms were explored as alternative materials for solventless adhesive bonding (SAB) of microfl uidic devices. [22][23][24][25][26] The SAB technology has potential for void-free bonding of larger substrates, with additional advantages including the ability to bond dissimilar and patterned substrates, which is critical for heterogeneous integration. [ 22 ] We are interested in investigating the adhesive properties of iCVD polymers and evaluating the feasibility of using iCVD nanometer thin fi lms for wafer-scale bonding, focusing on 300 mm silicon substrates (the current standard wafer size for IC production). To that end, 200-250 nm thick iCVD polyglycidylmethacrylate (PGMA) fi lms were deposited on 300 mm Initiated chemical vapor deposition (iCVD) polyglycidylmethacrylate (PGMA) thin fi lms are investigated as adhesives for wafer-scale bonding of 300 mm silicon substrates and demonstrated to form highly uniform, void-free bond interfaces. The effects of bonding temperature and pressure on critical adhesion energy ( G c ) between iCVD PGMA and silicon are studied using the fourpoint bend technique. G c values can be varied over an order of magnitude (0.59-41.6 J m −2 ) by controlling the bonding temperature and the observed dependence is attributed to changes in the physical (diffusion) and chemical (crosslinking) properties of the fi lm. Thermal degradation studies using spectroscopic ellipsometry reveal that the iCVD PGMA fi l...

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“…For supported films, the situation is different. It was shown that the glass transition temperature can increase, 32-36 decrease [33][34][35][36][37][38][39][40][41][42] or remain unaltered 29,32 depending on the interaction between the film and the substrate upon which the film was cast. 43 The magnitude of the shift was shown to depend not only on the thickness of the film, but also on the type of polymer and substrate.…”

Section: Related Research On Glass Transition Temperature In Thin Filmsmentioning

confidence: 99%

Influence of drying procedure on glass transition temperature of PMMA based nanocomposites

2014

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Influence of molecular weight and film thickness on the glass transition temperature and coefficient of thermal expansion of supported ultrathin polymer films

Cited by 127 publications

References 21 publications

Nanoscale Chemical-Mechanical Characterization of Nanoelectronic Low-kDielectric/Cu Interconnects

Nanoscale Chemical-Mechanical Characterization of Nanoelectronic Low-kDielectric/Cu Interconnects

Wafer Scale Solventless Adhesive Bonding with iCVD Polyglycidylmethacrylate: Effects of Bonding Parameters on Adhesion Energies

Influence of drying procedure on glass transition temperature of PMMA based nanocomposites

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