Influence of MoS2 quantum dots size on the properties of memristor devices

Chen, Mingjun; Dong, Guangjiong; Xue, Lixin; Gao, Zichen; Feng, Hao; Wang, Fenghe; Guan, Li; Li, Xu

doi:10.1016/j.ijleo.2019.163776

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…Based on the above discussion, properties of AIZS QDsbased device show huge advantages when compared with other QDs-based memristors, and the related parameters of these comparable devices have been summarized and listed in table 1 [7,15,[25][26][27]. It can be clearly found that compared with other reported QDs-based memristors, the P SET in this work is the most prominent advantage.…”

Section: Resultsmentioning

confidence: 69%

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

He¹,

Tao²,

Zhang³

et al. 2021

Nanotechnology

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Quaternary Ag–In–Zn–S (AIZS) quantum dots (QDs) play critical roles in various applications since they have advantages of combining superior optical and electrical features, such as tunable fluorescence emission and high carrier mobilities. However, the application of semiconductor AIZS QDs in brain-inspired devices (e.g. memristor) has been rarely reported. In this work, the tunable volatile threshold switching (TS) and non-volatile memory switching (MS) behaviors have been obtained in a memristor composed of AIZS QDs by regulating the magnitude of compliance current. Additionally, the innovative Ag/AIZS structure devices without traditional oxide layer exhibit low operation voltage (∼0.25 V) and programming current (100 nA) under the TS mode. Moreover, the devices achieve reproducible bipolar resistive switching (RS) behaviors with large ON/OFF ratio of ∼105, ultralow power consumption of ∼10–10 W, and good device-to-device uniformity under the MS mode. Furthermore, the charge transport mechanisms of the high- and low-resistance states under the positive and negative bias have been analyzed with space-charge-limited-current and filament conduction models, respectively. This work not only validates the potential of AIZS QDs acting as dielectric layer in RS devices but also provides a new guideline for designing ultralow power and multiple RS characteristics devices.

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Section: Resultsmentioning

confidence: 69%

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

He¹,

Tao²,

Zhang³

et al. 2021

Nanotechnology

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“…It is interesting to note that the set and reset power consumption of the Ag/WSe 2 QDs/LSMO/STO device are as low as ~0.16 nW (P set = V set × I set ) and~6 nW (P reset = V reset × I reset ), respectively, which are much lower than many reported QDs-based memristors [21,[33][34][35][36][37][38][39][40][41], as illustrated in Figure 1(f). Over 100 cycles of the I -V sweeps, the device displayed rather robust I -V curves and did not degrade, showing good endurance.…”

Section: Resultsmentioning

confidence: 87%

Superlow Power Consumption Artificial Synapses Based on WSe ₂ Quantum Dots Memristor for Neuromorphic Computing

Wang

Liu

et al. 2022

Research

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As the emerging member of zero-dimension transition metal dichalcogenide, WSe2 quantum dots (QDs) have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size. However, low power consumption and high reliability are still challenges for WSe2 QDs-based memristors as synaptic devices. Here, we demonstrate a high-performance, superlow power consumption memristor device with the structure of Ag/WSe2 QDs/La0.3Sr0.7MnO3/SrTiO3. The device displays excellent resistive switching memory behavior with a ROFF/RON ratio of ~5 × 103, power consumption per switching as low as 0.16 nW, very low set, and reset voltage of ~0.52 V and~ -0.19 V with excellent cycling stability, good reproducibility, and decent data retention capability. The superlow power consumption characteristic of the device is further proved by the method of density functional theory calculation. In addition, the influence of pulse amplitude, duration, and interval was studied to gradually modulating the conductance of the device. The memristor has also been demonstrated to simulate different functions of artificial synapses, such as excitatory postsynaptic current, spike timing-dependent plasticity, long-term potentiation, long-term depression, and paired-pulse facilitation. Importantly, digit recognition ability based on the WSe2 QDs device is evaluated through a three-layer artificial neural network, and the digit recognition accuracy after 40 times of training can reach up to 94.05%. This study paves a new way for the development of memristor devices with advanced significance for future low power neuromorphic computing.

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“…Recently QDs based resistive switching memory (memristors) has gained a lot of attention due to its unique structural and electronic properties [19][20][21][22][23][24][25][26][27][28]. Now high-performance memory devices can be developed using semiconductor QDs, by using large surface area, low temperature, and solution-based methods, which offer great advantages over high vacuum, high temperature, and high-cost manufacturing methods [29].…”

Section: Introductionmentioning

confidence: 99%

Transient N-GQDs/PVA nanocomposite thin film for memristor application

Pisal Deshmukh,

Patil,

Barve

et al. 2024

Nanotechnology

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In recent years Quantum dot (QDs) based resistive switching devices(memristors) have gained a lot of attention. Here we report the resistive switching behavior of nitrogen-doped graphene quantum dots/Polyvinyl alcohol (N-GQDs/PVA) degradable nanocomposite thin film with different weight percentages (wt. %) of N-GQDs. The memristor device was fabricated by a simple spin coating technique. It was found that 1wt% N-GQDs/PVA device shows a prominent resistive switching phenomenon with good cyclic stability and a high on/off ratio of ~102. From a detailed experimental study of band structure, we conclude that memristive behavior originates from the Space Charge Controlled Conduction (SCLC) mechanism. Further transient property of built memristive device was studied. Within three minutes of being submerged in distilled water, the fabricated memory device was destroyed. This phenomenon facilitates the usage of fabricated memristor devices to develop memory devices for military and security purposes.

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Influence of MoS2 quantum dots size on the properties of memristor devices

Cited by 8 publications

References 20 publications

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

Superlow Power Consumption Artificial Synapses Based on WSe ₂ Quantum Dots Memristor for Neuromorphic Computing

Transient N-GQDs/PVA nanocomposite thin film for memristor application

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Influence of MoS2 quantum dots size on the properties of memristor devices

Cited by 8 publications

References 20 publications

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

Superlow Power Consumption Artificial Synapses Based on WSe 2 Quantum Dots Memristor for Neuromorphic Computing

Transient N-GQDs/PVA nanocomposite thin film for memristor application

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Product

Resources

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Superlow Power Consumption Artificial Synapses Based on WSe ₂ Quantum Dots Memristor for Neuromorphic Computing