Influence of nickel precipitation on the formation of denuded zone in Czochralski silicon

Xu, Jia‐Zhuang; Wang, Yongzhi; Yang, Deren; Moeller, H.J.

doi:10.1016/j.jallcom.2010.04.164

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…Multicrystalline silicon (mc-Si) is attracting increasing attention owing to its high efficiency and low cost [1][2][3][4] . However, because of the presence of grown-in structural defects, the properties of mc-Si solar cells are not as good as those of Czochralski silicon (CZ-Si) cells.…”

Section: Introductionmentioning

confidence: 99%

Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency

et al. 2018

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We characterized strip-like shadows in cast multicrystalline silicon (mc-Si) ingots. Blocks and wafers were analyzed using scanning infrared microscopy, photoluminescence spectroscopy, laser scanning confocal microscopy, field-emission scanning electron microscopy, X-ray energy-dispersive spectrometry, and microwave photoconductivity decay technique. The effect on solar cell performance is discussed. The results show that the non-microcrystalline shadow region in Si ingots consists of precipitates of Fe, O, and C. The size of these Fe–O–C precipitates found at the shadow region is ~25 μm. Fe–O–C impurities can slightly reduce the minority carrier lifetime of the wafers while severely decrease in shunt resistance, leading to the increase in reverse current of the solar cells and degradation in cell efficiency.

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Section: Introductionmentioning

confidence: 99%

Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency

et al. 2018

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Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski silicon

Zhang

2013

J. Semicond.

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The influence of co-precipitation of copper and nickel on the formation of a denuded zone (DZ) in Czochralski silicon (Cz Si) was systematically investigated by means of etching and optical microscopy (OM). It was found that, for conventional high-low-high annealing (CFA), the DZ could be obtained in all specimens contaminated by copper and nickel co-impurity at different steps of the heat treatment, indicating that no copper precipitates or nickel precipitates were generated in the region just below the surface. However, for rapid thermal annealing (RTA)-low-high annealing, the tendency is not the same; the DZ could not be found in the specimen which was contaminated by copper and nickel contamination before the first RTA annealing. On the basis of the experimental results, it was supposed that the concentration and distribution of the vacancies generating during the RTA can influence the distribution of copper precipitation and nickel precipitation along the cross-section of Cz Si significantly, and thus influence the formation of the DZ to a great extent.

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Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer

Ji¹,

Xu²

2012

Acta Phys. Sin.

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The effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon epitaxial wafer is systematically investigated by optical microscopy. The samples first experience the rapid thermal processing (RTP) in different atmospheres, and then are Cu-contaminated at different temperatures. It is found that RTP in O2 ambient leads to a low density of copper precipitation in the p+ substrate, however, high density of copper precipitation is observed in the sample subjected to RTP in Ar or N2 ambient. Additionally, in all of the samples, no defects are found in the epitaxial layer. On the basis of the experiments, it can be concluded that interstitial silicon will prevent the process of copper precipitation while vacancy has an opposite effect. Furthermore, p/p+ epitaxial structure could absorb copper impurities, thereby keeping the epitaxial layer free of defect.

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Influence of nickel precipitation on the formation of denuded zone in Czochralski silicon

Cited by 3 publications

References 36 publications

Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency

Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency

Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski silicon

Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer

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