Influence of nitrogen and magnesium doping on the properties of ZnO films

Abstract

Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the N O defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N 2 ) O production and increasing nitrogen content.

Microwave assisted synthesis of ZnO-PbS heterojuction for degradation of organic pollutants under visible light

“…The peak (3) 535 eV assigned to O 2p state. These oxygen ions are chemisorbed with Zn 2+ ions and formed ZnO in the hexagonal wurtzite structure in accordance with XRD results [38][39][40] . The high intensity characteristic peak of Pb 4f 5/2 observed at 141.9 eV in Fig.…”

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

“…For example, in situ reflection high-energy electron diffraction (RHEED) used to monitor the growing surface in MBE growth demonstrated that the streaky pattern degraded immediately with the introduction of N gas source, indicating a change of growth mode from two-dimensional (2D) to three-dimensional (3D). [109] As a result, some additional defects have been formed in ZnO. Another possible reason is that the N dopant is not a good acceptor in ZnO.…”

“…A deep acceptor, N O , may be formed in Zn-/O-rich condition. [109][110][111] However, gradually it has been recognized that a shallow acceptor of N O -complexes can be realized in a special condition. [112,113] In the RSD method, an Nrich ambience can be created and resulting acceptor with small ionization energy will be formed in ZnO.…”

Synthesis of Pr-doped ZnO nanoparticles: Their structural, optical, and photocatalytic properties

“…[16] It is widely used in solar cells, sensors, catalysts, luminescence, optoelectronics, biomedical devices, and light-emitting diodes. [17][18][19][20] However, its wide bandgap (3.37 eV) means that it can absorb only UV light (λ < 368.0 nm) that occupies only 3%-5% of the sunlight; this restricts the utilization of the complete solar energy spectrum and leads to low quantum efficiency. [21,22] Besides, the separation of photogenerated electrons from vacancies needs to be strengthened for enhancing the photo-quantum efficiency.…”