Influence of nitrogen doping on properties of NiO films

Sriram, S.; Thayumanavan, A.; Ravichandran, K.

doi:10.1179/1743294414y.0000000380

Cited by 11 publications

(7 citation statements)

References 30 publications

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“…Number of crystallites per unit surface area (N) is calculated from the formula [19] where t is the thickness of the film.…”

Section: Resultsmentioning

confidence: 99%

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Photocatalytic efficacy of ZnO films – light intensity and thickness effects

Ravichandran¹,

Sindhuja²,

Uma³

et al. 2017

Surface Engineering

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The aim of this work is to investigate the effects of film thickness, light intensity and Ag incorporation on the photoctalytic efficacy of zinc oxide films. ZnO films with different thicknesses were prepared using an automated home-made jet nebuliser spray technique. The results show that the thickness of the film has no appreciable influence on the photocatalytic efficiency of ZnO films whereas the light intensity strongly influences the photocatalytic activity of ZnO films. It is also found that doping of Ag with ZnO causes considerable enhancement in the photocatalytic activity. The dye degradation rate constant in the case of undoped ZnO film with thickness 400 nm is 0.0263min-1, whereas for Ag doped ZnO film having the same thickness, it is 0.0530 min −1 . The reason for this enhancement in the photocatalytic efficacy of ZnO:Ag film is addressed with the help of optical band gap and the reported characteristics of Ag.

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“…Number of crystallites per unit surface area (N) is calculated from the formula [19] where t is the thickness of the film.…”

Section: Resultsmentioning

confidence: 99%

“…where l is the wavelength of X-ray(l = 1.5406A ˚), b is the FWHM and u is the half diffraction angle of the centroid of the peak. Number of crystallites per unit surface area (N) is calculated from the formula [19]…”

Section: Structural Studiesmentioning

confidence: 99%

Photocatalytic efficacy of ZnO films – light intensity and thickness effects

Ravichandran¹,

Sindhuja²,

Uma³

et al. 2017

Surface Engineering

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“…The change of the preferred orientation from (101) to the (012) plane for the 50 W sample may be attributed to that this plane exhibited good lattice matching conditions with the underlying layer leading to more film growth in this direction. Additionally, S Sriram et al mentioned that for the high doping levels of NiO thin films the preferential growth also changed due to excess dopant ions having been interstitially incorporated into the NiO host lattice causing this shift in preferential orientation [30]. Moreover, Vengatesh et al recorded that for NiO deposited at different RF power from 50 W to 70 W, the preferred orientation also changed [31].…”

Section: Resultsmentioning

confidence: 99%

Enhancing the solar hydrogen generation performance of nickel-oxide nanostructured thin films doped with molybdenum

Abdelmoneim,

Abdel-wahab,

Elfayoumi

et al. 2024

Phys. Scr.

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Utilizing technology to generate hydrogen (H2) solar energy on a scale corresponding to global energy use is a viable approach to relieve the environmental deterioration and address the energy crisis. This research deals with the manufacture of thin films prepared from nickel oxide (NiO) and their use in the photoelectrochemical water-splitting (PEC-WS) application to yield green H2 as a clean energy fuel. Herein, thin films of (molybdenum) Mo-doped and pure samples from NiO were successfully prepared using a straightforward sputtering method at different radio frequency (RF) power for the dopant Mo target from 0 to 50 watt. X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-Vis spectroscopy techniques were used to analyze the structural, morphological, chemical composition, and optical characterization of all the prepared films. The PEC-WS behaviors for green H2production and the impedance spectroscopy measurements were also investigated for all samples. In PEC measurements, the 50 W sample showed the highest PEC-WS performance. At -0.4V vs. RHE, the 50 W sample verified the highest value for the photocurrent density of about 1.7 mA which was approximately four times more than the pure NiO sample. The applied

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“…Almost ten years ago, in an attempt to predict band gap modulation via theoretical calculations [19], it was revealed that the wide band gap of NiO could be narrowed by nitrogen doping (NiO:N). Since then, NiO:N thin films have been made by wet methods [37][38][39] or dry methods (rf or dc sputtering [32,40], and the main properties of these undoped and N-doped NiO films are tabulated in Table 1. It is seen that in most cases heated substrates are used, and the introduction of nitrogen into the NiO structure has resulted in films with reduced transmittance and resistivity compared to undoped NiO films.…”

Section: Introductionmentioning

confidence: 99%

Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

et al. 2021

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Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

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Influence of nitrogen doping on properties of NiO films

Cited by 11 publications

References 30 publications

Photocatalytic efficacy of ZnO films – light intensity and thickness effects

Photocatalytic efficacy of ZnO films – light intensity and thickness effects

Enhancing the solar hydrogen generation performance of nickel-oxide nanostructured thin films doped with molybdenum

Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

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