Influence of Nitrogen Implantation on Electrical Properties of Al/SiO&lt;sub&gt;2&lt;/sub&gt;/4H-SiC MOS Structure

Król, K.; Sochacki, Mariusz; Turek, M.; Żuk, J.; Przewłocki, H. M.; Gutt, T.; Borowicz, P.; Guziewicz, M.; Szuber, J.; Kwoka, Monika; Kościelniak, P.; Szmidt, J.

doi:10.4028/www.scientific.net/msf.740-742.733

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…Nevertheless by using low energy implantation with constant energy, Okamoto et al [14] resulted in decrease of D it as a function of dose. This result is in opposite to ndings reported by our team here and in [17]. However all those results support our hypothesis.…”

contrasting

confidence: 58%

“…Our results of the Raman spectroscopy measurements have conrmed proportional dependence between crystal damage and trap density near the conduction band [17]. Fig.…”

Section: Resultsmentioning

confidence: 53%

“…The aim of nitrogen implantation in this experiment was to introduce the nitrogen particles into the region More specic details of technology used can be found in [17]. The inuence of implantation parameters on basic electrical parameters was investigated by HF CV measurements using Keithley 4200 Semiconductor Characterization System.…”

Section: Introductionmentioning

confidence: 99%

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Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO₂/n-Type 4H-SiC Interface

2014

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Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of SiO2 by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical eld makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benets of the material, especially in the case of MOSFET transistors. This is caused by insucient electrical parameters of SiO2/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the SiO2/SiC system results in signicant reduction of trap states density and increase of the channel eective mobility. The shallow implantation technique has been reported to be as much eective as nitric oxide annealing which is one of the most eective techniques for oxide quality improvement in case of SiC. Unlike the diusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of SiO2/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the inuence of implantation parameters and process conditions on observed eects. Both improvement and deterioration of interface quality was observed by dierent researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of SiO2/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.

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confidence: 58%

“…Our results of the Raman spectroscopy measurements have conrmed proportional dependence between crystal damage and trap density near the conduction band [17]. Fig.…”

Section: Resultsmentioning

confidence: 53%

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Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO₂/n-Type 4H-SiC Interface

2014

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“…This accuracy makes from this experimental technique a very efficient tool for structural study. An example of this type of application of Raman spectroscopy is delivered by study of changes in semiconductor structure caused by implantation [2].…”

Section: Introductionmentioning

confidence: 99%

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Borowicz

2016

Journal of Spectroscopy

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Presented work focuses the attention on two regions of MOS structure placed in the vicinity of the semiconductor/dielectric interface, in particular: on part of dielectric layer and thin layer of the substrate. In the presented work the application of absorption as a tool that can vary the absorption depth of excitation light into the semiconductor substrate is discussed. The changes of the absorption depth of visible light allows to obtain Raman signal from places in the substrate placed at different distances from the dielectric/semiconductor interface. The series of Raman spectra obtained from visible excitation in the case of varying absorption depth allowed to analyze the structure of the substrate as a function of distance from the interface. Deep ultraviolet Raman study regarding part of silicon dioxide layer placed directly at the interface is not discussed so far which makes the analysis of the structure of this part of dielectric layer possible. Comparison of reported in this work Raman data with structure of silicon/silicon dioxide interface obtained from other experimental techniques proves the applicability of proposed methodology.

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Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

Tang

et al. 2017

Solid-State Electronics

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Influence of Nitrogen Implantation on Electrical Properties of Al/SiO<sub>2</sub>/4H-SiC MOS Structure

Cited by 3 publications

References 6 publications

Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO₂/n-Type 4H-SiC Interface

Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO₂/n-Type 4H-SiC Interface

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

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Influence of Nitrogen Implantation on Electrical Properties of Al/SiO<sub>2</sub>/4H-SiC MOS Structure

Cited by 3 publications

References 6 publications

Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4H-SiC Interface

Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4H-SiC Interface

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

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Product

Resources

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Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO₂/n-Type 4H-SiC Interface

Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO₂/n-Type 4H-SiC Interface