Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

Procházka, Václav; Cifra, Michal; Kulha, Pavel; Ižák, Tibor; Rezek, Bohuslav; Kromka, Alexander

doi:10.1016/j.apsusc.2016.05.003

Cited by 7 publications

(3 citation statements)

References 30 publications

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“…Electrical measurements were performed using Ag/AgCl gate electrode setup described in [8]. The SGFET sensing area was flooded by buffer or culture solution (15 μL droplet) in a specific sequence (see Figure 1b x-axes "Measurement order") and gated with Ag/AgCl gate electrode.…”

Section: Methodsmentioning

confidence: 99%

Influence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect

Procházka

Ižák

Kromka

2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect transistor (SGFET) under the influence of inorganic and organic compounds were studied. Studied compounds included three different buffer solutions (Phosphate, HEPES, McIlvaine buffer) and commonly used culture media (fibronectin, albumin and fetal bovine serum). It was found that buffers with the same pH of 7.4 caused different voltage shifts in transfer characteristics. This effect was reversible which indicates the surface stability of the hydrogen-terminated diamond during repeated measurements. In contrast to this observation, the SGFET sensitivity decreased after applying the culture solutions which we attribute to the permanently adsorbed bio-layer formed on the SGFET channel sensing area.

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Section: Methodsmentioning

confidence: 99%

Influence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect

Procházka

Ižák

Kromka

2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

Self Cite

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“…In this work, the cellular activity was followed by changes in the threshold voltage of the device ( Figure 12 ). A similar EGFET configuration was proposed by Procházka et al; they studied yeast cells on their device and related the cellular metabolism with changes in potential (mostly because of pH changes) over the gate electrode [ 75 ].…”

Section: Devicesmentioning

confidence: 99%

Transistors for Chemical Monitoring of Living Cells

2018

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Featured Application Animal testing will be soon replaced by better accepted and less expensive in-vitro cell culture models, which explains the recent demand for real-time cell culture monitoring systems. They can bring high throughput screening and could be used not only for biomedical purposes (drug discovery, toxicology, protein expression, cancer diagnostic, etc.), but also for environmental ones (qualification of pollutants cocktails, for example). Beyond this, in-situ monitoring also participates in strengthening the fundamental knowledge about cells metabolism. AbstractWe review here the chemical sensors for pH, glucose, lactate, and neurotransmitters, such as acetylcholine or glutamate, made of organic thin-film transistors (OTFTs), including organic electrochemical transistors (OECTs) and electrolyte-gated OFETs (EGOFETs), for the monitoring of cell activity. First, the various chemicals that are produced by living cells and are susceptible to be sensed in-situ in a cell culture medium are reviewed. Then, we discuss the various materials used to make the substrate onto which cells can be grown, as well as the materials used for making the transistors. The main part of this review discusses the up-to-date transistor architectures that have been described for cell monitoring to date.

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“…Synthetic diamond has unique physical and chemical characteristics, such as hardness, semi-conductivity and high thermal conductivity [ 1 ]. In China, synthetic diamond is commonly produced by large-volume cubic high-pressure apparatus, which has three pairs of tungsten carbide anvils, as shown in Figure 1 .…”

Section: Introductionmentioning

confidence: 99%

Use of Acoustic Emission and Pattern Recognition for Crack Detection of a Large Carbide Anvil

Chen

Wang

Zeng

2018

Sensors

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Large-volume cubic high-pressure apparatus is commonly used to produce synthetic diamond. Due to the high pressure, high temperature and alternative stresses in practical production, cracks often occur in the carbide anvil, thereby resulting in significant economic losses or even casualties. Conventional methods are unsuitable for crack detection of the carbide anvil. This paper is concerned with acoustic emission-based crack detection of carbide anvils, regarded as a pattern recognition problem; this is achieved using a microphone, with methods including sound pulse detection, feature extraction, feature optimization and classifier design. Through analyzing the characteristics of background noise, the cracked sound pulses are separated accurately from the originally continuous signal. Subsequently, three different kinds of features including a zero-crossing rate, sound pressure levels, and linear prediction cepstrum coefficients are presented for characterizing the cracked sound pulses. The original high-dimensional features are adaptively optimized using principal component analysis. A hybrid framework of a support vector machine with k nearest neighbors is designed to recognize the cracked sound pulses. Finally, experiments are conducted in a practical diamond workshop to validate the feasibility and efficiency of the proposed method.

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Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

Cited by 7 publications

References 30 publications

Influence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect

Influence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect

Transistors for Chemical Monitoring of Living Cells

Use of Acoustic Emission and Pattern Recognition for Crack Detection of a Large Carbide Anvil

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