Influence of nonlinear absorption on Raman amplification in Silicon waveguides

Abstract

We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.

A continuous-wave Raman silicon laser

“…Secondary minerals (clays) formed in the soil environment are the major complementary reservoir higher in Ge/Si (refs 12-14). Dissolved Ge-Si relationships from most rivers from a variety of climatic and geological settings are similar, and comprise trends that have been explained as mixing between silica derived from weathering of primary minerals and silica derived from weathering of secondary clays 12,13 . According to this scheme, which we term the Murnane, Stallard, Froelich (MSF) model, incongruent dissolution of primary minerals yields a solution with high Si concentration, [Si], and low Ge/Si (component 1), whereas dissolution of secondary, Ge-enriched clays yields a low-[Si], high-Ge/Si solution (component 2).…”

“…Recently, stimulated Raman scattering has been used to demonstrate light amplification and lasing in silicon [4][5][6][7][8][9] . However, because of the nonlinear optical loss associated with two-photon absorption (TPA)-induced free carrier absorption (FCA) [10][11][12] , until now lasing has been limited to pulsed operation 8,9 . Here we demonstrate a continuous-wave silicon Raman laser.…”

Stimulated Raman Scattering in Quantum Dots and Nanocomposite Silicon Based Materials

“…The main challenge in silicon Raman laser is the loss caused by the free carriers that are generated via TPA (Liang & Tsang, 2004;Claps et al, 2004). By determining the steady-state density of generated carriers, and hence the magnitude of the pump-induced loss, the recombination lifetime is the central parameter in Raman as well as other semiconductor nonlinear optical devices.…”

Raman Amplification and Superluminal Propagation of Ultrafast Pulses Based on Loop Silicon Waveguides: Theoretical Modeling and Performance

“…The coefficient σ 0 = 1.45 × 10 −17 cm 2 [21] is the free-carrier absorption cross section measured at λ = 1.55 µm.…”