Influence of oxygen atmosphere on the photoluminescence properties of sol–gel derived ZrO2 thin films

Optical enhancement of Au doped ZrO2 thin films by sol–gel dip coating method

“…The emission peaks were observed at 389 nm (3.18 eV), 306 nm (4.05 eV), 602 nm (2.05 eV) and 767 nm (1.61 eV). The energy gap of tetragonal ZrO 2 phase is greater than 5.5 eV [1][2][3]. At 243 nm (5.11 eV) excitation a large intensity emission band of 390 nm is produced.…”

“…At 243 nm (5.11 eV) excitation a large intensity emission band of 390 nm is produced. The excitation band at 243 nm corresponds to energy near the energy gap of ZrO 2 tetragonal phase and has been assigned to grain boundaries defect states, which are an inherent aspect of the nanocrystallinity [2][3][4]. The intense zirconia emission peak at E389 nm in the ZrO 2 thin film can be due to the ionized oxygen vacancies (F and F _ centers) from the conduction band.…”

“…Of this class, wide-band gap oxide semiconductor of zirconia (ZrO 2 ) has occupied the forefront in the past decade [1][2][3] because of large binding energy of ZrO 2 has an ideal choice for inorganic passivation shells in a variety of semiconductor core/ shell nanoparticles. It is now well known that the metal doped ZrO 2 has the high potential for fabricating novel nanoelectronics and optical devices with enhanced performance.…”

“…In addition, the crystalline structure, surface morphology and film composition of the films were also determined. The basis of the technique is to coat a substrate with a precursor solution containing the requisite metal components in the required proportion, which transforms to a gel layer because of solvent evaporation and/or chemical reactions [1][2][3].…”

Synthesis and Luminescence Properties of ZrO2:Gd3+, RE3+(RE = Sm3+ ,Er3+) Phosphors

“…Due to its excellent optical properties, such as high refractive index, large optical band gap, low optical loss and high transparency in the visible and near infrared region [3,4], it is widely used as an essential material in the optical fields including broadband interference filters and active electro-optical devices. ZrO 2 is an ideal host material for various phosphors, because of its wide band-gap and low phonon energy [5].…”