Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor

Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

“…The experimental data are processed by ADSViewer Multifunctional Analyzer, developed in LabVIEW (National Instruments ® , USA) programming environment. [38][39][40][41] The following characteristics of the measured current are analyzed: the waveforms; the probability density functions (pdf), and the power spectral density (spectra). For the calculation of the spectra, the FFT is applied to each record.…”

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

“…Dielectric spectroscopy was employed to analyze in greater detail the conduction mechanisms involved in the transient current. Measurements were carried out at the previously mentioned voltages (10,11,12,13, and 14 V) by superimposing a 500 mV alternating signal and applying a frequency sweep from 20 Hz to 1 MHz. The spectra were recorded after 20 s of polarization.…”

“…Yakimov et al studied the origin of flicker noise in a 4 nm YSZ film and found that the principal mechanism is due to random jumps of oxygen ions. 13 The typical structure of RS devices consists of thin films stacked in a metal−insulator−metal (MIM) configuration. Recent research has explored variations in device structure to improve performance and expand their applications.…”

“…Also, they mention that the movement of vacancies can be modeled by deterministic methods, which would improve the performance of these devices regarding long-term use. Yakimov et al studied the origin of flicker noise in a 4 nm YSZ film and found that the principal mechanism is due to random jumps of oxygen ions …”