Influence of oxygen on the formation of epitaxial erbium silicide film on 〈111〉Si

Grimaldi, M. G.; Yan, Xinshui; Scerra, G.; Ravesi, S.; Spinella, C.

doi:10.1063/1.114963

Applied Physics Letters

1995

DOI: 10.1063/1.114963

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Influence of oxygen on the formation of epitaxial erbium silicide film on 〈111〉Si

M. G. Grimaldi

Xinshui Yan

G. Scerra

et al.

Abstract: Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb thin films on (001)Si

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Cited by 8 publications

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“…This is probably true except for the highest x, which exceeds the atomic oxygen percentage of 7% actually measured by Rutherford backscattering in samples prepared under an oxygen pressure of 2ϫ10 Ϫ8 torr. 17 Figure 4 shows that the Fermi-level position in these samples undergoes a monotonic decrease as x increases above 3ϫ10 Ϫ3 . Concurrently, ⌽ Bn can reach a value as high as 0.66 eV.…”

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confidence: 96%

Unpinning of the Fermi level at erbium silicide/silicon interfaces

Muret¹,

Tan²,

Frangis

et al. 1997

Phys. Rev. B

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Fermi-level positions at nearly perfect interfaces of epitaxial erbium silicide on silicon are measured by internal photoemission as a function of the thickness and oxygen contamination of the silicide. Thicknesses in excess of 30 silicide monolayers ͑about 120 Å͒ and oxygen concentration lower than 0.3% are necessary to obtain the lowest value of 0.28 eV for the barrier height on n-type Si. For thinner silicide films or higher oxygen contents, the barrier height increases and shifts the Fermi level downwards across 45% of the Si band gap. Such an unpinning of the Fermi level is believed to be the consequence of the simultaneous occurrence of the high structural perfection of these interfaces, of the low electronegativity of the silicide, and of the low density of metal-induced gap states near the Fermi level.

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mentioning

confidence: 96%

Unpinning of the Fermi level at erbium silicide/silicon interfaces

Muret¹,

Tan²,

Frangis

et al. 1997

Phys. Rev. B

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Morphological evolution of erbium disilicide nanowires on Si(001)

Yang

Cai

Wang

et al. 2004

Surface & Interface Analysis

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The morphological evolution of ErSi 2 nanowires on Si(001) with Er coverage was investigated by scanning tunnelling microscopy, low-energy electron diffraction and x-ray diffraction. At low Er coverages, elongated ErSi 2 nanowires in a hexagonal crystal structure are formed. The nanowires are exclusively oriented perpendicular to the dimer rows of the Si(001) substrate, thus suggesting a method to control the nanowire arrangement via the substrate configuration. At 3 ML of Er rectangular islands with flat tops are observed, which crystallize in the tetragonal lattice of ErSi 2 . Our experiments suggest that the structural transformation from hexagonal to tetragonal takes place when the nanostructures reach the height of the c-axis of the tetragonal unit cell.

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Initial stages of erbium disilicide formation on Si(001)

et al. 2003

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Influence of oxygen on the formation of epitaxial erbium silicide film on 〈111〉Si

Abstract: Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb thin films on (001)Si

Cited by 8 publications

References 4 publications

Unpinning of the Fermi level at erbium silicide/silicon interfaces

Unpinning of the Fermi level at erbium silicide/silicon interfaces

Morphological evolution of erbium disilicide nanowires on Si(001)

Initial stages of erbium disilicide formation on Si(001)

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