Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films

Abstract

PbSe thin films grown on (111)-oriented Si substrates by molecular-beam epitaxy were annealed under an oxygen atmosphere with a variety of temperatures and times. The photoluminescence intensity from the sample annealed at 350°C for 2 h was increased by 400-fold with frontside pumping and increased by 40-fold with backside pumping, respectively, in comparison with the as-grown sample. Furthermore, the mobility was increased twofold after annealing. Such large photoluminescence increases and mobility improvements could be attributed to the surface passivation and the dislocation and defect passivation caused by oxygen diffusion and reaction with the PbSe film.

Modified vapor phase deposition technology for high-performance uncooled MIR PbSe detectors

“…The inuence of resistance on the detectivity was analysed, and was summarized in Table 1. Based on the p-n charge separation model for the enhanced photoconduction detection mechanism, 33 the resistance of PbSe detector was regulated by the thickness of PbSeO 3 , 16 The typical frequency response of the optimized VPD-PbSe detector was shown in Fig. 8.…”

“…These aws are precluding seriously the development of CBD technology and communalization of uncooled lead-salts FPA imagers. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] During last 20 years, an innovative technology named VPD technology was developed by Spanish MoD laboratories (CIDA) and New Infrared Technologies, S.L. (NIT).…”

Incubation of PbSe Thin Films in a Tin(II) Salt Aqueous Solution: Modification and Ion-Exchange Reactions

“…It is a familiar experimental fact [49][50][51][52][53][54][55][56][57][58][59] , although the mechanism of oxygen photosensitization has not yet been fully clarified.…”

Photoconductive PbSe thin films for infrared imaging

“…39,40,69 The molecular beam epitaxy (MBE) grown monocrystalline PbSe on CaF 2 /Si(111) heterostructure by Li et al 41 showed majority carriers mobility of 647 cm 2 V À1 s À1 and 9.875 Â 10 3 cm 2 V À1 s À1 respectively at 300 K and 77 K, which increased to 1.073 Â 10 3 cm 2 V À1 s À1 and 29.912 Â 10 3 cm 2 V À1 s À1 with an in situ surface treatment. Zhao et al 42 indicated the annealing effect on mobility for a similar structure, where PbSe monocrystalline film showed p-type carrier mobility of 400 cm 2 V À1 s À1 and 1.05 Â 10 4 cm 2 V À1 s À1 respectively at 300 K and 77 K, which increased to 530 cm 2 V À1 s À1 and 2.19 Â 10 4 cm 2 V À1 s À1 after annealing at 300 1C for 2 hours. 42 Tetyorkin et al 43 reported the n-type mobility of monocrystalline PbSe film as 1.5 Â 10 4 cm 2 V À1 s À1 at 77 K, using the thermal evaporation technique.…”

“…Zhao et al 42 indicated the annealing effect on mobility for a similar structure, where PbSe monocrystalline film showed p-type carrier mobility of 400 cm 2 V À1 s À1 and 1.05 Â 10 4 cm 2 V À1 s À1 respectively at 300 K and 77 K, which increased to 530 cm 2 V À1 s À1 and 2.19 Â 10 4 cm 2 V À1 s À1 after annealing at 300 1C for 2 hours. 42 Tetyorkin et al 43 reported the n-type mobility of monocrystalline PbSe film as 1.5 Â 10 4 cm 2 V À1 s À1 at 77 K, using the thermal evaporation technique.…”