Modified vapor phase deposition technology for high-performance uncooled MIR PbSe detectors

Abstract

The low detectivity of VPD-PbSe MIR detectors was broken by duplicating the microstructural features and phase composition of high-performance CBD-PbSe detectors, providing a commercial technical solution for megapixel uncooled PbSe FPA imagers.

PbI2 3D network transporting model for the charge separation mechanism of PbSe detectors

“…Moreover, the large microcrystals are assembled by a mass of small nanocrystals, considered as the essential microstructure for infrared response. 26 This structure is the result of the cooperative effect of initial Ion-by-Ion (IBI) growth model and later Oriented-Attachment (OA) growth model. The FESEM image of sample sensitized in pure N 2 is shown in Fig.…”

Highly Responsive Mid-Infrared Metamaterial Enhanced Heterostructure Photodetector Formed out of Sintered PbSe/PbS Colloidal Quantum Dots

“…The synthesis of these colloids is well-studied and yields high-quality monodisperse CQDs. Lead chalcogenide CQDs have been successfully employed in the visible and NIR spectral ranges, but devices operating in the MIR have been scarcely reported and often perform worse than their bulk counterparts. − In order to combine the deposition advantages of CQDs and the performance of bulk materials, we have developed a liquid-phase spin-coating fabrication recipe, followed by a solid-state surface modification of CQDs (i.e., ligand exchange) and thin-film annealing step. The latter triggers microscale sintering of CQDs layers, enabling bulk-like transport and extended absorption to the MIR.…”

Lead Selenide Thin Films and Uncooled Midinfrared Detectors by Vapor Phase Deposition

“…glass substrates by a home-built VPD setup. 14 In brief, PbSe (99.999% purity) was deposited at 10 −2 Pa by adjusting the oxygen carrier flow (3 sccm) and iodine weight (0.1−2.4 g). The growth rate of the films varied from 6 to 54 nm/min by controlling the source temperatures from 820 to 880 °C.…”

“…In 2004, vapor phase deposited (VPD) technology was proposed by New Infrared Technologies (NIT) to compensate for the disadvantages of CBD technology. VPD possesses a number of advantages including low cost, high uniformity, good reproducibility, and CMOS compatibility. − However, the performance of VPD-PbSe detectors is often lower than that of CBD-PbSe detectors. Particularly, it is challenging to fabricate large-scale and high-resolution midinfrared imaging devices for aircraft and aerospace, defense and security, engineering, and other frontier technologies. − In the two past decades, strenuous efforts have been focused on the photoconductivity mechanisms and optimized experiments to improve the performance of VPD-PbSe detectors.…”

“…PbSe thin films with various microstructures were deposited on precleaned 3 in. glass substrates by a home-built VPD setup . In brief, PbSe (99.999% purity) was deposited at 10 –2 Pa by adjusting the oxygen carrier flow (3 sccm) and iodine weight (0.1–2.4 g).…”