Influence of Packaging Processes and Temperature on Characteristics of Schottky Diodes Made of SiC

Górecki, Paweł; Myśliwiec, Marcin; Górecki, Krzysztof; Kisiel, Ryszard

doi:10.1109/tcpmt.2019.2894970

Cited by 12 publications

(4 citation statements)

References 23 publications

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“…As to junction temperature, silicon IGBT devices have a limit of 150 • C for 6 kV voltage, whereas wide bandgap semiconductors such as SiC and GaN can work at higher temperatures. Considering structural components, welding materials, reliability and cost, the junction temperature is limited to 175 • C by available packaging technology [9,10]. In medium and high-power applications, traditional silicon IGBTs with low switching frequency and new SiC MOSFETs with high cost present performance and cost problems.…”

Section: Introductionmentioning

confidence: 99%

Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling

et al. 2022

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With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit. At present, third-generation semiconductor devices including SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) are gradually replacing the dominant IGBT module. The hybrid IGBT module consists of both and can improve the performance and reduce the cost of controllers. Limits due to the installation space, location, and other conditions in the car make it difficult to meet the requirements of controllers with an air-cooled heatsink due to their large size and limited heat dissipation capacity. A smaller and more powerful water-cooled heatsink case is required to ensure the heat dissipation of the IGBT in the controller. Based on previous experience in finite element numerical simulation, hydrodynamics calculation, and heat transfer calculation, ANSYS Workbench finite element software was used to analyze the thermal resistance of each structure inside the module and the heatsink structure. The fluid characteristics and heat transfer performance of three different flow channel structures were analyzed, and the design of the cooling flow fin was improved to provide a reference for the heat dissipation of the hybrid IGBT module.

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Section: Introductionmentioning

confidence: 99%

Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling

et al. 2022

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“…Previous studies have proved the influence of the assembly process, and the thermal pad dimension of Schottky diodes' die on the thermal resistance of the diodes [13,18]. The influence of the soldering method, related to the void ratio in the solder joint, on the thermal resistance of the power LED was also investigated [15].…”

Section: Introductionmentioning

confidence: 99%

Microstructure Influence of SACX0307-TiO2 Composite Solder Joints on Thermal Properties of Power LED Assemblies

et al. 2020

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The effect of the microstructure of solder joints on the thermal properties of power LEDs is investigated. Solder joints were prepared with different solder pastes, namely 99Sn0.3Ag0.7Cu (as reference solder) and reinforced 99Sn0.3Ag0.7Cu–TiO2 (composite solder). TiO2 ceramic was used at 1 wt.% and with two different primary particle sizes, which were 20 nm (nano) and 200 nm (submicron). The thermal resistance, the electric thermal resistance, and the luminous efficiency of the power LED assemblies were measured. Furthermore, the microstructure of the different solder joints was analyzed on the basis of cross-sections using scanning electron and optical microscopy. It was found that the addition of submicron TiO2 decreased the thermal and electric thermal resistances of the light sources by 20% and 16%, respectively, and it slightly increased the luminous efficiency. Microstructural evaluations showed that the TiO2 particles were incorporated at the Sn grain boundaries and at the interface of the intermetallic layer and the solder bulk. This caused considerable refinement of the Sn grain structure. The precipitated TiO2 particles at the bottom of the solder joint changed the thermodynamics of Cu6Sn5 formation and enhanced the spalling of intermetallic grain to solder bulk, which resulted in a general decrease in the thickness of the intermetallic layer. These phenomena improved the heat paths in the composite solder joints, and resulted in better thermal and electrical properties of power LED assemblies. However, the TiO2 nanoparticles could also cause considerable local IMC (Intermetallic Compounds) growth, which could inhibit thermal and electrical improvements.

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“…Unfortunately, at present this is only a theoretical possibility, because so far no one has introduced to industrial production any high-temperature cases dedicated to the considered class of devices. Yet, this would make possible operation of these devices at very high values of their internal temperature (Kisiel and Myśliwiec, 2017; Yildirim et al , 2010; Abay et al , 2003; Cinar et al , 2009; Sheng, 2009; Buttay et al , 2011; Górecki et al , 2019; Bisewski et al , 2016; Górecki et al , 2019a). Investigations devoted to construct such cases were described among others in the papers (Górecki et al , 2019; Górecki et al , 2019a; Bisewski et al , 2016).…”

Section: Introductionmentioning

confidence: 99%

Compact electrothermal model of laboratory made GaN Schottky diodes

Górecki

2020

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Purpose The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved. Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described. Findings It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed. Research limitations/implications The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes. Originality/value The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.

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Influence of Packaging Processes and Temperature on Characteristics of Schottky Diodes Made of SiC

Cited by 12 publications

References 23 publications

Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling

Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling

Microstructure Influence of SACX0307-TiO2 Composite Solder Joints on Thermal Properties of Power LED Assemblies

Compact electrothermal model of laboratory made GaN Schottky diodes

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