Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling

Yang, Canhui

doi:10.3390/electronics8060673

Cited by 3 publications

(4 citation statements)

References 17 publications

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“…Ulansky et al [35] considered an NDR circuit comprising a FET and a simple BJT CM with multiple outputs that control the slope of the current-voltage curve by changing the number of CM outputs. Yang [36] investigated a resonant tunneling electronic circuit with reactance elements having high and multiple peak-to-valley current density ratios displayed in the NDR curve. Kadioglu [37] considered a monolayer structure based on vanadium phosphide with a current-voltage characteristic having the NDR region.…”

Section: Reviewmentioning

confidence: 99%

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Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Ulansky

Raza

Milke³

2021

Applied Sciences

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Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage. Semiconductor structures with NDR have several unique properties that stimulate the search for technological and circuitry solutions in developing new semiconductor devices and circuits experiencing NDR features. This study considers two-terminal NDR electronic circuits based on multiple-output current mirrors, such as cascode, Wilson, and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed electronic circuits are the linearity of the current-voltage characteristics in the NDR region and the ability to regulate the value of negative resistance by changing the number of mirrored current sources. We derive equations for each proposed circuit to calculate the NDR region’s total current and differential resistance. We consider applications of NDR circuits for designing microwave single frequency oscillators and voltage-controlled oscillators. The problem of choosing the optimal oscillator topology is examined. We show that the designed oscillators based on NDR circuits with Wilson and improved Wilson multiple-output current mirrors have high efficiency and extremely low phase noise. For a single frequency oscillator consuming 33.9 mW, the phase noise is −154.6 dBc/Hz at a 100 kHz offset from a 1.310 GHz carrier. The resulting figure of merit is −221.6 dBc/Hz. The implemented oscillator prototype confirms the theoretical achievements.

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Section: Reviewmentioning

confidence: 99%

“…Considerable attention is paid to developing new NDR devices [21][22][23][24][25][26][27][28]30,31,33,[36][37][38][39], indicating the research topic's relevance.…”

Section: Reviewmentioning

confidence: 99%

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Ulansky

Raza

Milke³

2021

Applied Sciences

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“…A RTD is a semiconductor that exhibits controllable negative difference resistance (NDR) regions. The N-shaped I-V characteristics [27,28] of RTDs provide electrical gain for THz oscillator at room temperature [14]. A RTD is realized via the creation of a double-barrier quantum well (DBQW) structure [26] comprising a narrow-bandgap material sandwiched between two thin slabs of a wide-bandgap material.…”

Section: Modelingmentioning

confidence: 99%

“…As shown in Figure 5, the oscillation consists of the first and higher harmonics. The harmonic power is defined per Equations (28) to (31)…”

Section: Parameters Valuementioning

confidence: 99%

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

et al. 2019

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This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.

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Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

et al. 2020

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The rapid thermal annealing process is a key technology to control the parameters of the resonant tunneling diode (RTD) and to achieve high performance for the device. In this paper, the rapid thermal annealing process on the planar RTD has been investigated experimentally. In the experiment, the annealing sample chips of different annealed times have been recorded from the annealing equipment and their I–V characteristics have been measured accordingly. From the I–V characteristics, the negative resistance and the series resistance of the RTD can be obtained. Thus, the relationship between these parameters and annealing time can be established. Finally, by analyzing the concept of the resistance compensation effect, this study explains fully and in detail the dependency of the RTD parameter variation on the annealing time. VP and Vi are significantly reduced, greatly lowering RS, which in return also reduces the heat loss of the circuit and the power consumption of the RTD digital circuits as well as the RTD terahertz oscillator. As VV decreases, negative resistance RN is increased, and thus, the output power of the RTD terahertz oscillator is increased. These results are very useful in the study of RTD devices and fabrication technology.

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Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling

Cited by 3 publications

References 17 publications

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

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