Influence of photoresist pattern on charging damage during high current ion implantation

Dirnecker, T.; Ruf, A.; Frey, L.; Beyer, Andreas; Bauer, Anton J.; Henke, D.; Ryssel, H.

doi:10.1109/ppid.2002.1042620

Cited by 3 publications

(4 citation statements)

References 5 publications

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“…A yield criterion of 10 -9 A was established to distinguish between damaged and undamaged devices. Additional measurements showed good agreement between leakage current and charge-to-breakdown data [6]. …”

Section: Test Structures and Electricalmentioning

confidence: 61%

“…To study the influence of ion implantation parameters, the wafers were divided into seven groups with three wafers each and implanted as shown in Table II. Former experiments showed that plasma electron flood (PEF) prevents charging damage effectively [6]. Therefore, the electron flood system was turned off to accomplish high damage effects.…”

Section: Methodsmentioning

confidence: 99%

“…In Table I, finger width and finger spacing of the fork type antennas is shown. Moreover, various resist patterns overlapping or surrounding the poly electrodes were realized and were described in detail previously [6].…”

Section: Test Structures and Electricalmentioning

confidence: 99%

“…To investigate the influence of resist on charging damage, various resist patterns overlapping or surrounding rectangular poly antennas were realized [6]. In Fig.…”

Section: B Influence Of Resistmentioning

confidence: 99%

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Influence of antenna shape and resist patterns on charging damage during ion implantation

Dirnecker¹,

Frey²,

Bauer³

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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MOS capacitors with attached poly electrodes (antennas) were designed with various antenna shapes for the evaluation of charging damage during ion implantation. Different resist patterns were implemented to investigate the influence of photoresist on charging damage. The influence of dose, beam current, and ion energy was studied for p-type and n-type structures. For the first time, the influence of all these parameters on charging damage was analyzed using the same set of test devices. The influence of beam current and ion energy on charging damage was found to be different for p-type and n-type devices. The substrate effect on charging damage was in contrast to previously reported data for most of the implantation parameters under investigation.

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Section: Test Structures and Electricalmentioning

confidence: 61%

Section: Methodsmentioning

confidence: 99%

Section: Test Structures and Electricalmentioning

confidence: 99%

“…To investigate the influence of resist on charging damage, various resist patterns overlapping or surrounding rectangular poly antennas were realized [6]. In Fig.…”

Section: B Influence Of Resistmentioning

confidence: 99%

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