Influence of plasma excitation frequency fora-Si:H thin film deposition

Curtins, H.; Wyrsch, Nicolas; Favre, M.; Shah, A.

doi:10.1007/bf01016517

Cited by 167 publications

(65 citation statements)

References 11 publications

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“…Ref. [5]), the deposition rate increases with plasma excitation frequency (Fig. 2c); this e!ect is also observed when depositing at moderately high temperatures with hydrogen dilution (in the case where ¹ "3003C, H dilution ratio"1 and VHF-power"2 W an increase of 30% of the rate is observed by increasing f from 40 to 70 MHz).…”

Section: Plasma Excitation Frequencymentioning

confidence: 77%

“…Hydrogenated amorphous silicon layers with typical thicknesses of 1 m are deposited by the VHF PE-CVD technique described in detail elsewhere [5]; deposition is done on glass for optical and electrical characterisation and on silicon wafer for infrared measurements. Two di!erent deposition systems have been used to supply the series for the present work: a conventional one (with a total volume of 25 l) designed for depositions at plasma frequencies between 40 and 70 MHz.…”

Section: Depositionmentioning

confidence: 99%

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More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution

Ziegler

Daudrix

Droz

et al. 2001

Solar Energy Materials and Solar Cells

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In the present work, several series with variation of deposition parameters such as hydrogen dilution ratio, VHF-power and plasma excitation frequency f have been extensively analyzed. Compared with`conventionala more-stable layers obtained at 200}2503C and high H dilution ratios of about 10, it was observed that electrical transport properties after light-induced degradation of layers deposited at`moderately higha temperatures (300}3503C) are equivalent but required lower H dilution ratios (between 2 and 4). As a consequence, the deposition rate of more stable layers obtained at moderately high temperatures is increased by a factor of 2. Moreover, optical gaps of a-Si:H deposited at 300}3503C are signi"cantly lower (by approx. 10 meV); furthermore, they decrease with f .

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Section: Plasma Excitation Frequencymentioning

confidence: 77%

Section: Depositionmentioning

confidence: 99%

More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution

Ziegler

Daudrix

Droz

et al. 2001

Solar Energy Materials and Solar Cells

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“…The best material is obtained within the transition region from amorphous to highly microcrystalline and knowledge of the variation of the crystalline fraction with respect to input silane concentration or any other process parameter like the RF power is thus critical; in thin film transistor technology instead, materials with higher crystallinity fractions are used, because of the larger carrier mobility [3]. Yet even if the required characteristics of the microcrystalline material are known for a specific application, the parameters in which microcrystalline silicon is deposited may vary considerably depending on such parameters as RF driving frequency [5], silane concentration in hydrogen [6] or the deposition rate [7]. As a result, the relationship between deposition conditions and properties of microcrystalline material is only partially understood.…”

Section: Introductionmentioning

confidence: 99%

Input silane concentration effect on the a-Si:H to μc-Si:H transition width

Feltrin

Strahm

Bugnon

et al. 2010

Solar Energy Materials and Solar Cells

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In this work the microstructure transition width from amorphous to microcrystalline silicon is discussed. It is shown that the width of the transition depends on the input silane concentration level and indirectly on the silane depletion level. The higher the input silane concentration and depletion, the wider the transition. Experimental results are then compared to an analytical model and good agreement is obtained with a semi-empirical approach that takes into account the effect of the silane density in the plasma on the electron density.

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“…p;z; = POT0 -$[$;+l+~b) (12) ,Q; = V"~"&(s",~+l+~b~ (13) The expressions (12) and (13) show that the measured uO&products generally need to be corrected by a certain factor, which is a function of the parameter b and, thus, is influenced by doping (also by low-level, non-intentional doping due e.g. to [0] contamination).…”

Section: Evaluation Of Foo From Oph and Lambmentioning

confidence: 99%

“…For that purpose, a series of films and cells was produced by the VHF-GD deposition technique at 70 MHz [13], while varying thereby the deposition temperature for the undoped layer. For each film -cell couple, first a -2.5 pm thick, undoped a-Si:H film was deposited on a glass substrate; subsequently, using the same set of deposition parameters, the "same" a-Si:H material was incorporated as an i-layer in a standard, -0.6 urn thick p-i-n solar cell.…”

Section: Correlation Between ~Oi?-products Of A-si:h Films and Solar mentioning

confidence: 99%