More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution

Ziegler, Y.; Daudrix, V.; Droz, C.; Platz, R.; Wyrsch, Nicolas; Shah, A.

doi:10.1016/s0927-0248(00)00202-6

Cited by 16 publications

(9 citation statements)

References 9 publications

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“…It is well‐established that LSM is assigned to monohydrides, while HSM is attributed to dihydrides or integrated clustered monohydrides groups at internal void surfaces . The microstructure factor R , which combines both stretching modes to describe the layer quality, is defined as:

R = I_{HSM} / ((), I_{HSM} + I_{LSM}) = I_{2090} / ((), I_{2090} + I_{2000}),

…”

Section: Resultsmentioning

confidence: 93%

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Zhao

Mazzarella

Procel

et al. 2020

Progress in Photovoltaics

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Hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H) layers exhibit promising optoelectrical properties for carrier‐selective‐contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c‐Si) passivation quality is technologically challenging for growing thin layers (less than 20 nm) on the intrinsic hydrogenated amorphous silicon ((i)a‐Si:H) layer. Here, we present an evaluation of different strategies to improve optoelectrical parameters of SHJ contact stacks founded on highly transparent nc‐SiOx:H layers. Using plasma‐enhanced chemical vapor deposition, we firstly investigate the evolution of optoelectrical parameters by varying the main deposition conditions to achieve layers with refractive index below 2.2 and dark conductivity above 1.00 S/cm. Afterwards, we assess the electrical properties with the application of different surface treatments before and after doped layer deposition. Noticeably, we drastically improve the dark conductivity from 0.79 to 2.03 S/cm and 0.02 to 0.07 S/cm for n‐ and p‐contact, respectively. We observe that interface treatments after (i)a‐Si:H deposition not only induce prompt nucleation of nanocrystals but also improve c‐Si passivation quality. Accordingly, we demonstrate fill factor improvement of 13.5%abs from 65.6% to 79.1% in front/back‐contacted solar cells. We achieve conversion efficiency of 21.8% and 22.0% for front and rear junction configurations, respectively. The optical effectiveness of contact stacks based on nc‐SiOx:H is demonstrated by averagely 1.5 mA/cm2 higher short‐circuit current density thus nearly 1%abs higher cell efficiency as compared with the (n)a‐Si:H.

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R = I_{HSM} / ((), I_{HSM} + I_{LSM}) = I_{2090} / ((), I_{2090} + I_{2000}),

…”

Section: Resultsmentioning

confidence: 93%

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Zhao

Mazzarella

Procel

et al. 2020

Progress in Photovoltaics

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“…In Fig. 4 are also represented l 0 s R Maj and l 0 s R min products measured on various a-Si:H layers [12] in the annealed and degraded states. We remark that the l 0 s R products of lc-Si:H samples are slightly larger than those of degraded a-Si:H samples, and are approximately equal to those of annealed a-Si:H layers.…”

Section: Resultsmentioning

confidence: 99%

Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous silicon

Droz

Goerlitzer

Wyrsch

et al. 2000

Journal of Non-Crystalline Solids

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Undoped hydrogenated microcrystalline silicon (lc-Si:H) layers were grown by the very high frequency glow discharge (VHF-GD) technique under various deposition conditions. The electronic transport properties under illumination were investigated by means of steady-state photoconductivity and steady-state photocarrier grating methods. Similarly to hydrogenated amorphous silicon (a-Si:H), power law dependencies as a function of the generation rate are observed for the photoconductivity, for the ambipolar diusion length, and for the parameter b (indicating the Fermi level). For lc-Si:H, as for a-Si:H, nearly constant product of (mobility´recombination time) of majority and minority carriers is observed as a function of the parameter b. Based on these similarities, we assume that the electronic transport model developed for a-Si:H remains valid for lc-Si:H.

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“…42,43 R* can be defined as the ratio of the integrated intensities of the LSM and HSM absorption bands. In other words, R* represents the ratio of the concentration of Si−H 2 bonds to the total concentration of Si−H bonds, as defined by eq 1 44,45 (…”

Section: Methodsmentioning

confidence: 99%

Silicon–Hydrogen Bonding Configuration Modified by Layer Stacking Sequence in Silicon Heterojunction Solar Cells

Jeong

et al. 2022

ACS Appl. Energy Mater.

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Recent improvements in highly efficient crystalline silicon (c-Si) solar cells have relied on surface passivation. Hydrogen plays a crucial role in the surface passivation of silicon heterojunction (SHJ) solar cells because Si–H bonds passivate dangling bonds in amorphous silicon and on the c-Si surface. In this work, we demonstrate that the Si–H bonding configuration is modified by layer stacking sequence for SHJs. The quality of surface passivation strongly correlates with low-temperature hydrogen effusion from the SHJ structure. Our results show that the deposition of doped layers on intrinsic amorphous silicon supplies additional hydrogen to the amorphous/crystalline heterostructure. Moreover, the deposition of a p-layer modifies the microstructure of the intrinsic layer underneath, whereas depositing an n-layer does not induce structural changes. We suggest that the low-temperature hydrogen effusion characteristics can be used as a sensitive indicator for examining the passivation quality of SHJ solar cells.

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More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution

Cited by 16 publications

References 9 publications

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous silicon

Silicon–Hydrogen Bonding Configuration Modified by Layer Stacking Sequence in Silicon Heterojunction Solar Cells

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