Influence of power and temperature on properties of sputtered AZO films

Patel, Kartik H.; Rawal, Sushant K.

doi:10.1016/j.tsf.2016.08.073

Cited by 44 publications

(18 citation statements)

References 36 publications

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“…Depending on the application, we can vary the wettability of the surface to shift the performance from hydrophilicity to hydrophobicity. Translucent hydrophobic coatings have many industrial uses, including anti-fogging, anti-ice adhesion, anti-wetting, anti-corrosion, and moderating friction resistance [12].…”

Section: Introductionmentioning

confidence: 99%

Effect of sputtering power and substrate temperature on structural, optical, wettability and anti-icing characteristics of aluminium doped zinc oxide

Patel

Chauhan

2022

Mater. Res. Express

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Thin films of ZnO:Al were synthesized on glass substrates by RF magnetron sputtering. Structural, optical, wettability and anti-icing properties of the thin films are studied as a function of substrate temperature and sputtering power. XRD patterns showed an increase in the intensity of (002) peak when the sputtering power and substrate temperature are increased. The roughness and average grain size also increased with an increment in substrate temperature and sputtering power. Transmittance and band gap energy observed in the wavelength range of 350-800 showed the average transmittance was in the range of 90 to 76% and 3.12-2.88 eV. The contact angle and anti-icing properties observed during the investigation demonstrated that the synthesized coatings are hydrophobic and the formation of ice was delayed when compared to uncoated substrates.

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Section: Introductionmentioning

confidence: 99%

Effect of sputtering power and substrate temperature on structural, optical, wettability and anti-icing characteristics of aluminium doped zinc oxide

Patel

Chauhan

2022

Mater. Res. Express

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“…For example, cost effective solar cells based on Cu (In,Ga)Se 2 (CIGS) and Cu 2 ZnSnS 4 (CZTS) absorbers have been fabricated with a TCO based on AZO [6,7]. There are several methods used to deposit AZO, including physical vapor deposition (under various operation conditions for magnetron sputtering, such as radio-frequency [8][9][10][11][12][13][14][15][16][17][18][19][20], medium-frequency [8,[21][22][23][24][25][26], DC [8,16,22,[26][27][28][29][30][31][32][33][34][35][36][37], pulsed DC [38], high power impulse [39,40], ion beam assisted [41], chemical vapor deposition [1,5] and other chemical methods such as spin coating and sol gel [2,4]. Among them, magnetron plasma sputtering has been successfully used to deposit ITO on large area substrates (up to 15 m 2 ) and is also regarded as a viable and cost effective solution for AZO …”

Section: Introductionmentioning

confidence: 99%

Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating

Stamate

2019

Nanomaterials

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Transparent and conducting thin films were deposited on soda lime glass by RF magnetron sputtering without intentional substrate heating using an aluminum doped zinc oxide target of 2 inch in diameter. The sheet resistance, film thickness, resistivity, averaged transmittance and energy band gaps were measured with 2 mm spatial resolution for different target-to-substrate distances, discharge pressures and powers. Hall mobility, carrier concentration, SEM and XRD were performed with a 3 mm spatial resolution. The results reveal a very narrow range of parameters that can lead to reasonable resistivity values while the transmittance is much less sensitive and less correlated with the already well-documented negative effects caused by a higher concentration of oxygen negative ions and atomic oxygen at the erosion tracks. A possible route to improve the thin film properties requires the need to reduce the oxygen negative ion energy and investigate the growth mechanism in correlation with spatial distribution of thin film properties and plasma parameters.

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“…They attributed such band gap value decrease to a carrier concentration decrease with increasing sputtering power. Patel and Rawal [23] reported a similar decrease from 3.29 eV to 3.22 eV of the optical band gap value for sputtered AZO thin films versus RF power variation from 60 W to 180 W respectively. However, It should be noted that the band gap of the AZO film prepared at 100 W is slightly blue-shifted due to the fact that its thickness is lower (115 nm) as compared to the average thickness of the other samples (167 nm) [24].…”

Section: Optical Propertiesmentioning

confidence: 63%

Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration

Challali

Mendil

Touam

et al. 2020

Materials Science in Semiconductor Processing

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Aluminum-doped zinc oxide (AZO) thin films are deposited on glass substrate by radio frequency (RF) magnetron sputtering method in confocal configuration at room temperature (RT). Several techniques are used to investigate the effects of sputtering power, from 50 to 300 W, on structural, optical and electrical properties. It is found, from Grazing Incidence X-Ray Diffraction (GIXRD) analysis, that the sputtering power has a great influence on the crystalline quality of AZO films. A preferential orientation along the c-axis is obtained at lower sputtering power of 50 W. XPS analysis confirms the existence of only Zn and Al in the oxidized state in accordance with the XRD results. SEM and AFM observations of AZO films reveal dense and homogenous distribution of small grains on the surface. Analysis by UV-Vis-NIR spectroscopy at RT reveals that the average optical transmittance in the visible range (400-800 nm) of the AZO thin films is higher than 75%. Hall-effect measurements put into evidence that the electrical resistivity of the films increases with the increase of the sputtering power. A low resistivity of 1.65×10 -3 Ω.cm is obtained for the lowest sputtering power (50W). Moreover, AZO thin film deposited at 50 W and annealed for 1h at 400°C under vacuum shows a lower resistivity of 5.75×10 -4 Ω.cm, an average optical transmission above 86% and a high figure of merit (Ф TC ) value of 3.4×10 -3 Ω -1 sq which suggests that the fabricated AZO thin films are promising for optoelectronic devices in the UV region.

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Influence of power and temperature on properties of sputtered AZO films

Cited by 44 publications

References 36 publications

Effect of sputtering power and substrate temperature on structural, optical, wettability and anti-icing characteristics of aluminium doped zinc oxide

Effect of sputtering power and substrate temperature on structural, optical, wettability and anti-icing characteristics of aluminium doped zinc oxide

Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating

Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration

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