2021
DOI: 10.1016/j.mssp.2020.105408
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Influence of power on the physical and electrical properties of magnetron sputtered gadolinium oxide thin films for MOS capacitors

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Cited by 7 publications
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“…Using the linear fitting of the curves, the opposite polarities of the oxide charges in the Gd x O y and Al x O y dielectric layers were determined to be +4.4 × 10 −7 and −5.4 × 10 −7 C cm −2 , respectively, which were similar to those proposed previously. [ 57,58 ] Moreover, the capacitance versus voltage ( C – V ) characteristics of the Gd x O y ‐ and Al x O y ‐based CRFETs were measured before and after the stress of V G − V FB = +3 and −3 V for 1 s, respectively, and are shown in Figure 3b. It is worth noting that only the vertical shift, instead of the horizontal shift, of the C – V curves were observed after the voltage stress, implying a modification of the oxide capacitance.…”
Section: Resultsmentioning
confidence: 99%
“…Using the linear fitting of the curves, the opposite polarities of the oxide charges in the Gd x O y and Al x O y dielectric layers were determined to be +4.4 × 10 −7 and −5.4 × 10 −7 C cm −2 , respectively, which were similar to those proposed previously. [ 57,58 ] Moreover, the capacitance versus voltage ( C – V ) characteristics of the Gd x O y ‐ and Al x O y ‐based CRFETs were measured before and after the stress of V G − V FB = +3 and −3 V for 1 s, respectively, and are shown in Figure 3b. It is worth noting that only the vertical shift, instead of the horizontal shift, of the C – V curves were observed after the voltage stress, implying a modification of the oxide capacitance.…”
Section: Resultsmentioning
confidence: 99%