Influence of processing conditions on hillock formation in electron-beam evaporated platinum/titanium films

Eichorst, Dennis J.; Blanton, Thomas N.; Barnes, C. L.; Bosworth, L.

doi:10.1080/10584589408017027

Cited by 19 publications

(13 citation statements)

References 4 publications

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“…The growth rate characteristics of nickel and lanthanum oxides, as a function of substrate temperature, have been determined using the precursors Ni(thd) 2 and La(thd) 3 . The deposition of LNO from Ni(thd) 2 the deposition studies were performed using the Si/SiO 2 substrate because of the technological importance of integration of the ferroelectric device with silicon circuitry.…”

Section: Discussionmentioning

confidence: 99%

“…The deposition of LNO from Ni(thd) 2 the deposition studies were performed using the Si/SiO 2 substrate because of the technological importance of integration of the ferroelectric device with silicon circuitry. For these studies, the electrical resistivity of the as-deposited layers showed a dependence on the composition of the layer with a minimum value measured at La 1.05 Ni 0.95 O 3 .…”

Section: Discussionmentioning

confidence: 99%

“…[1] Stress relief of the platinum layer can result in the formation of undesirable morphology defects known as platinum hillocks. [2] The platinum electrodes exhibit poor fatigue resistance characteristics, [3] thought to be because of the accumulation of oxygen vacancies in the interface area between the platinum and ferroelectric due to lattice mismatch and chemical incompatibility. Defects such as oxygen vacancies can form charge traps, leading to domain pinning and fatigue.…”

Section: Introductionmentioning

confidence: 99%

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The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices

Lane¹,

Crosbie

Wright

et al. 2003

Chemical Vapor Deposition

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Lanthanum nickelate layers have been deposited onto 100 mm diameter silicon/silicon dioxide and (0001) sapphire substrates by liquid-delivery metal±organic (MO) CVD using the precursors La(thd) 3 and Ni(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) dissolved in tetrahydrofuran and heptane. The LaNiO 3 (LNO) was deposited at 630 C in an oxidizing atmosphere, and the as-grown layers were highly crystalline and highly (110)-oriented on Si/SiO 2 . Electrical resistivity studies were performed and showed a dependence on the La/Ni ratio, the substrate used, and the post-deposition annealing conditions. A minimum electrical resistivity value of 300 lX cm was measured for LNO deposited on (0001) sapphire and rapidly annealed at 750 C. The resistivity values of the LNO layers deposited onto silicon/silicon dioxide were higher, with a minimum value of 1 mX cm. The rapid annealing at 750 C resulted in cracking of some of the LNO layers deposited onto the silicon substrates. However, the layers that were nickel-rich withstood the annealing treatment better and showed little evidence of cracking.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices

Lane¹,

Crosbie

Wright

et al. 2003

Chemical Vapor Deposition

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“…Problems which have been experienced with Pt multi-layered substrates include poor adhesion, 25 hillocking 26,27 and oxidation of the Pt surface through the formation of surface TiO x . Problems which have been experienced with Pt multi-layered substrates include poor adhesion, 25 hillocking 26,27 and oxidation of the Pt surface through the formation of surface TiO x .…”

Section: Discussionmentioning

confidence: 99%

Analysis of the stress and interfacial reactions in Pt/Ti/SiO2/Si for use with ferroelectric thin films

Madsen

Weaver

Ljungcrantz

et al. 1998

Journal of Elec Materi

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“…Furthermore, ferroelectric thin films on Pt electrodes exhibit a significant fatigue after long bipolar switching pulses. 8,9 Metallic oxide electrodes such as LaNiO 3 , La 0.5 Sr 0.5 CoO 3 , SrRuO 3 , and YBa 2 Cu 3 O 7Ϫx , replacing the noble metal electrodes like Pt, have been confirmed to be excellent alternatives for solving these problems. 10,11 However, graded ferroelectric thin films on metallic oxide electrodes have not been investigated yet.…”

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confidence: 99%

Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes

Bao

Mizutani

Yao

et al. 2000

Applied Physics Letters

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Articles you may be interested inComposition and orientation dependence of electrical properties of epitaxial Pb ( Zr x Ti 1−x ) O 3 thin films grown using metalorganic chemical vapor deposition J. Appl. Phys. 95, 3111 (2004); 10.1063/1.1645646 Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO 3 thin films on Pt/Ti/SiO 2 /Si substrates Appl.Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb,Ca)TiO 3 thin films derived by a modified sol-gel technique Appl.

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Influence of processing conditions on hillock formation in electron-beam evaporated platinum/titanium films

Cited by 19 publications

References 4 publications

The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices

The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices

Analysis of the stress and interfacial reactions in Pt/Ti/SiO2/Si for use with ferroelectric thin films

Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes

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