Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes

Abstract

Articles you may be interested inComposition and orientation dependence of electrical properties of epitaxial Pb ( Zr x Ti 1−x ) O 3 thin films grown using metalorganic chemical vapor deposition J. Appl. Phys. 95, 3111 (2004); 10.1063/1.1645646 Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO 3 thin films on Pt/Ti/SiO 2 /Si substrates Appl.Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb,Ca)TiO 3 thin films derived by a modified sol-gel technique Appl.

Síntese e processamento de cerâmicas em forno de microondas doméstico

“…Isto é maior do que a que foi reportada, em torno de 118, para filmes finos de Pb 0.8 Ba 0.2 TiO 3 derivados de sol-gel e depositados sobre eletrodos de platina [35]. Adicionalmente, a constante dielétrica obtida neste trabalho também é muito maior do que as de outros filmes depositados sobre eletrodos de LaNiO 3 reportados na literatura [36,37]. Bao et al [38] formação de uma baixa constante dielétrica da rede do filme fino/eletrodo de interface, que é a principal causa de baixos valores de constante dielétrica relatadas em muitos filmes finos ferroelétricos [38].…”

Modeling of anomalous hysteresis behavior of compositionally graded ferroelectric films at low fields

“…We obtain a power-law dependence of P off ϳ E max 1.96 for E max varying from 2 to 10 V / m. This finding suggests that the space-charge-limited current is able to describe the power-law relationship of graded ferroelectrics at the small to medium field region such as that demonstrated by Brazier et al If high driving fields are adopted in the simulation and all layers in the sample trace saturated loops, larger value of ␥ will be obtained ͑Ͼ3͒ such as that demonstrated by Chan et al 11 In reality, many measurements on the polarization offset of graded ferroelectrics reported some larger ␥ at high applied fields ͑␥ Ϸ 2-5͒ and the same compositionally graded film can also give vastly different ␥'s for upgraded and downgraded films. 3,17,[23][24][25] This suggests that other conduction mechanisms may become significant at the high-field regimes. A more rigorous calculation applicable from low to high fields may need to include other conduction mechanisms as well as the substrate effect and/or the film-electrode interaction.…”

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

“…It is known that both microstructure and properties of ferroelectric films are dependent greatly on fabrication processes [28][29][30][31]. The extrinsic parameters are also assumed to be responsible for variations in microstructure dependence of ferroelectricty, and might be the reason for a broad dispersion in some data such as critical size below which ferroelectricity is eradicated.…”