Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effects

Arnaud, L.; Reimbold, G.; Waltz, P.

doi:10.1016/s0026-2714(99)00100-6

Cited by 4 publications

(4 citation statements)

References 12 publications

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“…It is known that m is 1 when the frequency is low, and m is 2 when the frequency is high in the pulse EM of Al or Cu interconnects [4,9]. It seems that the frequency in our experiment, 1Hz, is low enough that pulsed EM can be converted simply by subtracting pulse off-period.…”

Section: Em Life Time For Pulse and DC Stressmentioning

confidence: 68%

“…However, such high current can be applied when pulsed current is used because Joule heating is significantly reduced. Scaling of lifetime for pulsed EM has been studied before in Al or Cu interconnects and the following modified Black's equation was suggested [4][5][9][10][11].…”

Section: Em Life Time For Pulse and DC Stressmentioning

confidence: 99%

“…Localized current crowding during DC current stressing causes high Joule heating in that region. Under pulsed current stressing, the amount of Joule heating is reduced because of heat dissipation during off current time [4]. Because real operating condition is pulse or AC rather than pure DC, it is important to understand the EM behavior in pulse current stressing.…”

Section: Introductionmentioning

confidence: 99%

“…Because real operating condition is pulse or AC rather than pure DC, it is important to understand the EM behavior in pulse current stressing. There have been studies of pulse or AC EM in Al or Cu interconnects [4]. However, there are not many studies on the pulse EM behavior of solder joints.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Electromigration behavior of micro Sn bump under pulsed DC

You

Kim

Joo

2009

2009 IEEE International Reliability Physics Symposium

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Pulsed electromigration (EM) was performed for flip-chip solder bump. Pulsed EM was conducted with current density of 5.2 ~ 7.1 × 10 4 A/cm 2 at 160 o C. DC EM was also performed at 3.6 ~ 4.7 × 10 4 A/cm 2 for comparison. Reduction of Joule heating was monitored when pulse current is applied. The life times of pulsed EM samples are larger than those of DC EM samples. The current density exponent for 1Hz pulsed EM is 1.42 and that of DC EM is 2.25. The life time of pulsed EM was successively converted into that of DC EM by considering Joule heating temperature and the duty factor. Failure time of pulsed EM increases with increasing frequencies around 2 Hz.

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Section: Em Life Time For Pulse and DC Stressmentioning

confidence: 68%

Section: Em Life Time For Pulse and DC Stressmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electromigration behavior of micro Sn bump under pulsed DC

You

Kim

Joo

2009

2009 IEEE International Reliability Physics Symposium

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Increasing the reliability of solid state lighting systems via self-healing approaches: A review

Lafont

Zeijl

Zwaag

2012

Microelectronics Reliability

106

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Frequency-dependent failure mechanisms of nanocrystalline gold interconnect lines under general alternating current

Luo

Zhang

2014

Journal of Applied Physics

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Thermal fatigue failure of metallization interconnect lines subjected to alternating currents (AC) is becoming a severe threat to the long-term reliability of micro/nanodevices with increasing electrical current density/power. Here, thermal fatigue failure behaviors and damage mechanisms of nanocrystalline Au interconnect lines on the silicon glass substrate have been investigated by applying general alternating currents (the pure alternating current coupled with a direct current (DC) component) with different frequencies ranging from 0.05 Hz to 5 kHz. We observed both thermal fatigue damages caused by Joule heating-induced cyclic strain/stress and electromigration (EM) damages caused by the DC component. Besides, the damage formation showed a strong electrically-thermally-mechanically coupled effect and frequency dependence. At lower frequencies, thermal fatigue damages were dominant and the main damage forms were grain coarsening with grain boundary (GB) cracking/voiding and grain thinning. At higher frequencies, EM damages took over and the main damage forms were GB cracking/voiding of smaller grains and hillocks. Furthermore, the healing effect of the reversing current was considered to elucidate damage mechanisms of the nanocrystalline Au lines generated by the general AC. Lastly, a modified model was proposed to predict the lifetime of the nanocrystalline metal interconnect lines, i.e., that was a competing drift velocity-based approach based on the threshold time required for reverse diffusion/healing to occur.

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Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effects

Cited by 4 publications

References 12 publications

Electromigration behavior of micro Sn bump under pulsed DC

Electromigration behavior of micro Sn bump under pulsed DC

Increasing the reliability of solid state lighting systems via self-healing approaches: A review

Frequency-dependent failure mechanisms of nanocrystalline gold interconnect lines under general alternating current

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