Influence of quadratic mobility degradation factoron low frequency noise in MOS transistors

Masson, Pascal Le; Ghibaudo, G.; Autran, Jean‐Luc; Morfouli, P.; Brini, J.

doi:10.1049/el:19981122

Cited by 11 publications

(12 citation statements)

References 3 publications

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“…It is clear that neither Eq. (2) nor the one proposed by Masson et al [27] can explain the 1/f noise at high drain current in our Si(110) n-MOSFETs.…”

Section: Surface Roughness Scatteringcontrasting

confidence: 60%

“…A saturation and afterwards, a drop of the noise at very high drain current has been then noticed. This is actually the consequence of the strong influence of the surface roughness scatterings mechanism [27]. The modeling has been carried out using [28] …”

Section: Surface Roughness Scatteringmentioning

confidence: 99%

“…A further study within the frame of the ∆N − ∆µ corr formalism based on a modified Eq. (2) proposed by Masson et al [27] and incorporating the effect of the surface roughness scattering mechanisms through a quadratic mobility attenuation factor has been carried out. The mobility model provided by Ong et al [29] has been used.…”

Section: Surface Roughness Scatteringmentioning

confidence: 99%

“…The square label denotes the sum of the mentioned quantities. The Grey curves are the simulations within the ∆N − ∆µcorr model, the 'modified ∆N − ∆µcorr' one referring to model proposed by Masson et al [27].…”

Section: Surface Roughness Scatteringmentioning

confidence: 99%

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1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS

2011

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Communicated by L. K. J. VandammeOn account of low resistivity contacts and of a newly developed device, the investigation of the 1/f noise at high drain current has been made possible. Therefore, it has been acknowledged that the correlated carrier number and mobility fluctuations model were not able to satisfactorily explain the 1/f noise within this particular region. Indeed, the fundamental mobility fluctuations were also generating 1/f fluctuations and were furthermore, taking over at high biases. It eventually came to light that the fundamental mobility fluctuations along with the sole oxide charge fluctuations were accurately modeling the noise all over the measurement range, allowing us to notice that the fundamental mobility fluctuations were generating the same amount of 1/f fluctuations as the induced mobility added to the cross correlated ones.

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“…It is clear that neither Eq. (2) nor the one proposed by Masson et al [27] can explain the 1/f noise at high drain current in our Si(110) n-MOSFETs.…”

Section: Surface Roughness Scatteringcontrasting

confidence: 60%

Section: Surface Roughness Scatteringmentioning

confidence: 99%

Section: Surface Roughness Scatteringmentioning

confidence: 99%

Section: Surface Roughness Scatteringmentioning

confidence: 99%

See 2 more Smart Citations

1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS

2011

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“…For high frequencies, noise figure characteristics mainly caused by thermal noise degradation affects low noise amplifiers, mixers, and other circuit modules. Although a few papers [30,31] were published so far, a practical noise degradation model has not yet been developed. We are currently in the process of researching the noise degradation modeling supported by STARC [32].…”

Section: Reliability Modeling For Design For Reliability (Dfr)mentioning

confidence: 99%

Analog/mixed-signal circuit design in nano CMOS era

Kobayashi

Aoki

Katoh

et al. 2014

IEICE Electron. Express

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This paper describes analog/mixed-signal circuit design in the nano CMOS era. Digitally-assisted analog technology is becoming more important, and as an example, our fully digital FPGA implementation of a TDC with self-calibration is shown. Since pure analog circuits are still present and "good" device modeling is required for their designs, device modeling technology for nano CMOS with complicated behavior is also reviewed.

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