Influence of quantization of band states on the effective electron mass in quaternary alloys

Ghatak, K. P.; Ghoshal, A.; Mitra, B.

doi:10.1007/bf02451675

Cited by 17 publications

(3 citation statements)

References 34 publications

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“…It is the effective momentum mass which enters in various transport coefficients and plays the most dominant role in explaining the experimental results under different scattering mechanisms [5][6][7][8]. In recent years, the EMM in such materials under different external conditions has been studied extensively [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Under degenerate conditions, only the electrons at the Fermi surface of n-type semiconductors participate in the conduction process and, hence, the effective momentum mass (EMM) of the electrons corresponding to the Fermi level would be of interest in electron transport under such conditions.…”

Section: Effective Electron Massmentioning

confidence: 99%

Applications and Brief Review of Experimental Results

Ghatak¹,

Bhattacharya²

2010

Thermoelectric Power in Nanostructured Materials

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In this book, we have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wave-vector space of the charge carriers, respectively. In this chapter, we discuss few applications in this context in Sect. 14.2 and we shall also present a very brief review of the experimental investigations in Sect. 14.3 which is a sea in itself. Section 14.4 contains the single experimental open research problem.

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Section: Effective Electron Massmentioning

confidence: 99%

Applications and Brief Review of Experimental Results

Ghatak¹,

Bhattacharya²

2010

Thermoelectric Power in Nanostructured Materials

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“…The nature of these variations has been investigated in the literature. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] Some of the significant features, which have emerged from these studies, are: Nevertheless it appears from the literature that the EEM under magnetic quantization for microstructures of nonparabolic semiconductors having different band structures has yet to be investigated in details. It is well known that the band structure of semiconductors can be dramatically changed by applying the external fields.…”

Section: Introductionmentioning

confidence: 99%

Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

Debbarma¹,

Bhattacharjee²,

Bhattacharyya³

et al. 2012

j adv phys

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In this paper we study the influence of quantizing magnetic field on the effective electron mass (EEM) in nonlinear optical materials on the basis of a newly formulated electron dispersion law by considering all types of anisotropies of the energy band constants within the framework of k.p. formalism. The results for III-V, ternary and quaternary materials form special case of our generalized analysis. We have also studied the EEM in II-VI, bismuth, IV-VI, stressed, Te, GaP, PtSb 2 , Bi 2 Te 3 , Ge, GaSb and II-V semiconductors by formulating the appropriate magneto dispersion law in each case. It has been found that the magneto EEM in nonlinear optical materials depends on the magnetic quantum number due to the combined influence of the crystal field splitting constant and the anisotropic spin-orbit splitting. The same mass in Bi and Ge depends on both the magnetic quantum number and the Fermi-energy due to the presence of band non-parabolicity only and for stressed materials stress makes the mass quantum number dependent. The EEM in Te, GaP, PtSb 2 and II-V semiconductors depend on the magnetic quantum number, which is the characteristic feature of the same material. The EEM is an oscillatory function of inverse quantizing magnetic field due to SdH effect and increases with increasing concentration and exhibits a periodic variation with the direction of the quantizing magnetic field in the appropriate cases. Under certain special conditions all the results for all the materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test.

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“…It has, therefore, different values in different materials and varies with electron concentration, with the magnitude of the reciprocal quantizing magnetic field under magnetic quantization, with the quantizing electric field as in inversion layers, with the nanothickness as in quantum wells and quantum well wires and with superlattice period as in the quantum confined superlattices of small gap semiconductors with graded interfaces having various carrier energy spectra. The nature of these variations has been investigated by Ghatak et al [18][19][20][21][22][23][24][25][26][27][28][29][30] and a few others [31][32][33][34][35]. Some of the significant features which have emerged from these studies are:…”

Section: Introductionmentioning

confidence: 99%

A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves

et al. 2007

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We present a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III-V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings under different external conditions. It has been observed that the unperturbed isotropic energy spectrum in the presence of light changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. In the presence of light, the conduction band moves vertically upward and the band gap increases with the intensity and colours of light. It has been found, taking n-InAs, n-InSb, n-Hg 1−x Cd x Te and n-In 1−x Ga x As y P 1−y lattice matched to InP as examples, that the EEM increases with increasing electron concentration, intensity and wavelength in various manners. The strong dependence of the effective momentum mass (EMM) at the Fermi level on both the light intensity and wavelength reflects the direct signature of the light waves which is in contrast with the corresponding bulk specimens of the said materials in the absence of photo-excitation. The rate of change is totally band-structure-dependent and is influenced by the presence of the different energy band constants. The well known result for the EEM at the Fermi level for degenerate wide gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions, and this compatibility is the indirect test of our generalized formalism.

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Influence of quantization of band states on the effective electron mass in quaternary alloys

Cited by 17 publications

References 34 publications

Applications and Brief Review of Experimental Results

Applications and Brief Review of Experimental Results

Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves

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