Abstract:Highly C-axis oriented ZnO thin film was manufactured by radio-frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X-ray diffraction results showed that the ZnO thin films annealed at 600 C by RTA technique had a perfect C-axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking c… Show more
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