Influence of self-focusing on laser damage to II-VI semiconductors

Borshch, A. A.; Brodin, M. S.; Krupa, M. M.

doi:10.1070/qe1977v007n09abeh012808

Cited by 4 publications

(5 citation statements)

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“…However, as we showed in [14], in uniform semiconductors belonging to group A 2 B 6 , breaking is not possible in the volume or on the output surface of bulky samples in the presence of two-photon absorption. We related this fact to the self-defocusing of laser beams and the attenuation due to two-photon absorption.…”

Section: Anisotropy Of Self-defocusing and The Breaking Of Semiconducmentioning

confidence: 91%

“…Total internal reflection is violated not only in CdSSe and ZnSe crystals, in whose volume the refractive index n in the high-power laser radiation field decreases [5], but also in SiC:N crystals, where, according to [6], the refractive index increases in the crystal volume. A decrease in the refractive index in CdSSe and ZnSe crystals is related to the appearance of nonequilibrium high-density electrons in the conductance band [7].…”

Section: Laser-induced Drift Of Electrons and The Laser-pulse Scanningmentioning

confidence: 98%

“…It is known from the published data that laser irradiation of weakly absorbing semiconductor crystals by a high-power continuous-wave CO 2 laser [14] gives rise to changes in the lowtemperature luminescence spectra. Namely, the radiation band of dopant-acceptor pairs becomes broader and new luminescence bands appear.…”

Section: Laser-induced Drift Of Dopant Atomsmentioning

confidence: 99%

“…In the volume of these crystals, the refractive index increases owing to the nonlinear polarization of equilibrium conductance electrons in the field of high-power laser radiation [6]. Variation in the refractive index is proportional to the density N 0 of equilibrium electrons:…”

Section: Laser-induced Drift Of Electrons and The Laser-pulse Scanningmentioning

confidence: 99%

“…A decrease in the refractive index in CdSSe and ZnSe crystals is related to the appearance of nonequilibrium high-density electrons in the conductance band [7]. In SiC:N crystals, an increase in n in the laser-radiation field is related to the nonlinear polarization of equilibrium conductance electrons [6].…”

Section: Laser-induced Drift Of Electrons and The Laser-pulse Scanningmentioning

confidence: 99%

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Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

Krupa

Korostil

Skirta

2005

Radiophys Quantum Electron

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We experimentally study the influence of the laser-induced drift (LID) of dopant electrons and atoms on the optical properties of semiconductors. It is shown that the LID of electrons results in a dramatic change in the refractive index in the region of laser-radiation output from semiconductor crystals, impairement of the total internal reflection in semiconductors, and the occurrence of astigmatism during self-defocusing of the laser radiation in anisotropic semiconductors. This effect influences the breaking of semiconductors by nanosecond and picosecond laser pulses. The LID of dopant atoms, caused by the electrostatic interaction between the ions of these atoms and the space charge of drifting electrons, changes differently the luminescence spectra on the input and output surfaces of crystals and also results in the appearance of a dark spot on the output surface of some ZnSe crystals after irradiation by a continuous-wave CO 2 laser.

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Section: Anisotropy Of Self-defocusing and The Breaking Of Semiconducmentioning

confidence: 91%

Section: Laser-induced Drift Of Electrons and The Laser-pulse Scanningmentioning

confidence: 98%

Section: Laser-induced Drift Of Dopant Atomsmentioning

confidence: 99%

Section: Laser-induced Drift Of Electrons and The Laser-pulse Scanningmentioning

confidence: 99%

Section: Laser-induced Drift Of Electrons and The Laser-pulse Scanningmentioning

confidence: 99%

See 3 more Smart Citations

Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

Krupa

Korostil

Skirta

2005

Radiophys Quantum Electron

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Pulse-width and focal-volume dependence of laser-induced breakdown

et al. 1981

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Pulse-Width and Focal-Volume Dependence of Laser-Induced Breakdown

Stryland

Soileau

Smirl

et al. 1981

Laser Induced Damage in Optical Materials: 1980

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The laser-induced breakdown fields at 1.06 μm of fused SiO2, single-crystal NaCl, and air were measured as a function of focal volume and laser pulse width while keeping all other parameters, including the specimen, constant. The laser pulse width was varied from 40 psec to 31 nsec, and the focal volume was varied by over two orders of magnitude. The dependence of the breakdown field for NaCl and SiO2 on the laser pulse width tp and the focal folume V was empirically determined to be EB = AV−1tp−1/4 + C and the dependence for air to be EB = (AV−1 + C) tp−1/4, where A and C are material-dependent constants. Current theories of laser-induced breakdown are carefully compared with these present measurements and are found to be inconsistent.

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Influence of self-focusing on laser damage to II-VI semiconductors

Cited by 4 publications

References 0 publications

Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

Pulse-width and focal-volume dependence of laser-induced breakdown

Pulse-Width and Focal-Volume Dependence of Laser-Induced Breakdown

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