Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates

Zq, Li; Chen, H; Liu, Hsin‐Fu; Wan, Li; Mh, Zhang; Huang, Qi; Zhou, Jiannan; Yang, Ning; Tao, Kun; Han, Yazhou; Luo, Yang

doi:10.1063/1.126774

Cited by 17 publications

(8 citation statements)

References 17 publications

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“…17 The maximal change of the DBE peak energy was found to be as large as 6 meV at the maximal doping level of 8.8 × 10 17 cm −3 in our samples. This result can be explained by the band gap narrowing (BGN).…”

Section: Resultsmentioning

confidence: 90%

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

et al. 2011

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Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy (HVPE) were studied by transient photoluminescence (PL). Concentrations of silicon and oxygen were varied in the range between 10 17 and 10 18 cm −3 , as confirmed by secondary ion mass spectroscopy (SIMS). We show that a reduction of the background silicon concentration by one order of magnitude compared to the background level in undoped samples can be achieved by incorporation of oxygen during the growth. A strong band gap narrowing (BGN) of ∼6 meV was observed with increasing doping in the studied samples. The low temperature PL recombination time for donor-bound excitons (DBEs) was found to depend significantly on donor concentration. A model assuming generation of DBEs by capturing of free excitons by neutral donors explains the experimental results at low temperature. From fitting the experimental DBE lifetime to the model, the donor concentration dependence for O and Si donors could be reproduced. An effective exciton capture cross-section was found to be ∼9.4 × 10 −15 and 1.2 × 10 −14 cm 2 for silicon and oxygen donors, respectively.

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Section: Resultsmentioning

confidence: 90%

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

et al. 2011

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“…These considerations show that Si and O may be the elements most appropriate for n-type doping of GaN. Doping of MBE grown c-GaN by Si was reported by As et al [50], Martinez-Guerrero [51] and Li et al [52]. Elemental Si was evaporated from an effusion cell at source temperatures between 750 °C and 1200 °C.…”

Section: N-type Dopingmentioning

confidence: 91%

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Schikora

Lischka

2003

phys. stat. sol. (c)

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Molecular beam epitaxy has successfully been used to grow crystalline layers of group III-nitrides (GaN, AlN and InN) with cubic (zinc-blende) structure on GaAs substrates. In this article, we discuss these efforts that, despite inherent difficulties due to the metastability of the c-III nitrides, led to substantial improvements of the structural, electrical and optical quality of these wide gap semiconductors. We review experimental work concerned with the epitaxy of c-GaN and the control of the growth process in-situ, the important issue of p-and n-type doping of c-GaN and investigations of the structural and optical properties of c-InGaN and c-AlGaN.

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“…With increasing Si doping, it has been reported that the exciton emission peak shifted to lower energies with an accompanying increase in its width. 462,463 For impurity concentrations near 10 20 cm −3 , band-to-band transitions dominated in degenerate GaN:Si at low temperatures. 463 The 3.15-eV band, assigned to DAP transitions involving an unidentified shallow acceptor, exhibited a shift to higher energies with increasing Si doping.…”

Section: Silicon Dopingmentioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,828

119

1,666

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Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

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Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates

Cited by 17 publications

References 17 publications

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Luminescence properties of defects in GaN

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