Influence of Silicon Doping on the SA-MOVPE of InAs Nanowires

Sladek, Kamil; Penz, Andreas; Weis, K.; Wirths, Stephan; Volk, Christian; Alagha, S.; Akabori, Masashi; Lenk, St.; Luysberg, M.; Lueth, Hans; Hardtdegen, H.; Schaepers, Thomas; Gruetzmacher, D.

doi:10.1557/proc-1258-p02-05

Cited by 4 publications

(6 citation statements)

References 14 publications

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“…We note that decreasing the stacking fault density by reducing r g did not give rise to a less spread behavior or to a higher conductivity of SA MOVPE grown nanowires. However, we observed a significant decrease of resistivity and its statistical spread in intentionally doped SA MOVPE nanowires, as published previously [1]. The similar behavior of nominally undoped VLS MOVPE wires shown here and intentionally doped SA MOVPE wires in [1] may be an indicator for unintentional carbon doping in VLS MOVPE due to an incomplete group III precursor decomposition at the relatively low T g of 400…”

Section: Electrical Propertiessupporting

confidence: 90%

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Comparison of InAs nanowire conductivity: influence of growth method and structure

Sladek

Winden

Wirths

et al. 2011

Phys. Status Solidi C

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The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three different methods – 1. selective area metal organic vapor phase epitaxy (SA MOVPE), 2. gold assisted vapor liquid solid (VLS) MOVPE and 3. extrinsic catalyst free VLS molecular beam epitaxy (MBE) – is investigated. The influence on conductivity by stacking faults and different growth conditions is analyzed to determine the main impact. It is found that in terms of crystal structure, nanowires deposited by VLS MOVPE and VLS MBE behave similarly showing a zinc blende (ZB) phase while nanowires deposited by SA MOVPE feature a high density of stacking faults and a tendency to higher amounts of wurtzite (WZ) when grown with a decreased growth rate. However, the conductivity of wires deposited by VLS MOVPE is found to be much higher and statistically less dispersive compared to the other two wire types. An electrical similarity between nominally undoped wires in VLS MOVPE and previously reported intentionally doped wires in SA MOVPE is observed and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Electrical Propertiessupporting

confidence: 90%

“…However, InAs nanowires grown by either SA MOVPE or MBE do not exhibit the expected quasimetallic behaviour. In contrast, a quite high resistance has been measured [1]. InAs nanowires have the tendency to form stacking faults during growth since the difference in formation energy between the ZB and the WZ phase is very small [2].…”

mentioning

confidence: 97%

Comparison of InAs nanowire conductivity: influence of growth method and structure

Sladek

Winden

Wirths

et al. 2011

Phys. Status Solidi C

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“…In contrast, they show semiconductor behavior, i.e., an increase of the resistance with decreasing temperature, and are quite resistive at room temperature. 23 The reason for the low conductivity of our nanowires is not clear, so far.…”

Section: Introductionmentioning

confidence: 89%

Effect of Si-doping on InAs nanowire transport and morphology

Wirths¹,

Weis²,

Winden³

et al. 2011

Journal of Applied Physics

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The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N 2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

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“…Au particles, serve as seeds for the nanowire growth [20,21]. Alternatively, InAs nanowires can also be grown by selective-area growth [22][23][24][25], self-induced growth [26,27] or by using In droplets as seed particles on a SiO x covered substrate [13]. Depending on the growth method and the growth parameters, the structural and transport properties can vary substantially.…”

Section: Introductionmentioning

confidence: 99%

Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires

et al. 2013

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Electronic transport properties of InAs nanowires are studied systematically. The nanowires are grown by molecular beam epitaxy on a SiOx-covered GaAs wafer, without using foreign catalyst particles. Room-temperature measurements revealed relatively high resistivity and low carrier concentration values, which correlate with the low background doping obtained by our growth method. Transport parameters, such as resistivity, mobility, and carrier concentration, show a relatively large spread that is attributed to variations in surface conditions. For some nanowires the conductivity has a metal-type dependence on temperature, i.e. decreasing with decreasing temperature, while other nanowires show the opposite temperature behavior, i.e. temperature-activated characteristics. An applied gate voltage in a field-effect transistor configuration can switch between the two types of behavior. The effect is explained by the presence of barriers formed by potential fluctuations.

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Influence of Silicon Doping on the SA-MOVPE of InAs Nanowires

Cited by 4 publications

References 14 publications

Comparison of InAs nanowire conductivity: influence of growth method and structure

Comparison of InAs nanowire conductivity: influence of growth method and structure

Effect of Si-doping on InAs nanowire transport and morphology

Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires

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