Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide degradation due to organic contamination

Saga, Koichiro; Hattori, Takeshi

doi:10.1063/1.120476

Cited by 45 publications

(28 citation statements)

References 8 publications

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“…Because silicon is one of the technologically most important materials utilized in microelectronics, the adsorption behavior and impact of organic contaminants on silicon wafers upon storage and processing have been investigated in a systematic fashion. [17][18][19][20][21][22][23] Extending our recently published preliminary studies, 24 this paper reports comprehensive investigations of the contamination process of NH 4 F etched H-Si͑111͒ surfaces. Both n-and p-type H-Si͑111͒ were characterized systematically by using solid-state electrical measurements and infrared spectroscopy in real time during exposure to the laboratory environment.…”

mentioning

confidence: 98%

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Liu¹,

Yu²

2003

J. Electrochem. Soc.

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The degradation of the electrical characteristics of hydrogen-terminated silicon ͑both n-and p-doped͒ under typical laboratory environments was investigated. When a hydrogen-terminated silicon ͑H-Si͒ surface was exposed to air under ambient conditions, the current density/bias voltage ͑J-V͒ curve of the mercury-silicon junction thus formed changed significantly during the first 50 h. For n-type H-Si surfaces, the J-V curve initially maintained ohmic characteristics for a period of 8-12 h, then evolved to diode behavior; for p-doped samples, the current density showed a rapid increase and reached a maximum in about 20 h. In both cases, the electrical property was recovered to some extent after sonication in organic solvents. In agreement with infrared spectroscopic results, organic contamination upon exposure to ambient air is suggested to play an important role in the change of the electrical performance of hydrogen-terminated silicon.

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confidence: 98%

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Liu¹,

Yu²

2003

J. Electrochem. Soc.

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“…One is the airborne organic contamination before plasma nitridation process. Several investigations reported that airborne organic contamination can affect the reliability of gate oxide[21 [3]. It was also reported that airborne organic contamination retarded the plasma nitridation process [4].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Atmosphere on Ultra - Thin Oxynitride Film for Precisely Controled Plasma Nitridation Process

Saki

Tamaoki

Shimizu

et al. 2006

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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Influence of the atmosphere on ultra-thin oxynitride film was investigated for the precisely controlled plasma nitridation process. Some organic contaminant adsorb on the wafer before plasma nitridation process in clean room atmosphere. The adsorbed organic contaminant reduces the efficiency of plasma nitridation and increases the electrical thickness. The TDDB characteristic of ultra-thin oxynitride film was degraded due to the adsorbed organic contaminant. On the other hand, nitrogen concentration decreases due to exposure to an atmosphere after plasma nitridation process. The drop of nitrogen concentration causes Vth shift and Vth variation in MOSFET. The atmosphere and waiting time for post nitridation anneal affect on the drop of nitrogen concentration. It was demonstrated that the suppression of organic contamination before plasma nitridation and the control of the waiting time and atmosphere before post nitridation are the most important factors for the precise control of ultra-thin oxynitride film.

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“…One is the airborne organic contamination before plasma nitridation process. Several investigations reported that airborne organic contamination can affect the reliability of gate oxide [2] [3] . It was also reported that airborne organic contamination retarded the plasma nitridation process [4] .…”

Section: Introductionmentioning

confidence: 99%

Influence of the atmosphere on ultra-thin oxynitride films by plasma nitride process

Saki

Shimizu

Mori

et al. 2005

ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005.

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In plasma nitridation process for ultra thin gate dielectrics, the nitrogen concentration in the film is drastically dropped during short time after plasma nitridation process. This reduction of nitrogen before post plasma nitridation anneal process causes the Vth shift and Vth variation on the wafer. Vth shift is larger in NMOSFET. On the other hand, Vth variation on the wafer is larger in PMOSFET. The oxynitride films after plasma nitridation process should be annealed quickly to prevent Vth shift and variation. However, there must be some waiting time before post nitridation anneal process. The partial pressure of water and oxygen is necessary to be controlled during the waiting time for post nitridation anneal process. These procedures are very important for the precise control of MOSFET performance, in the generation of 65nm devices and beyond.

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Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide degradation due to organic contamination

Cited by 45 publications

References 8 publications

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Influence of the Atmosphere on Ultra - Thin Oxynitride Film for Precisely Controled Plasma Nitridation Process

Influence of the atmosphere on ultra-thin oxynitride films by plasma nitride process

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