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In this paper, the physical & electrical characteristics o f ultra-thin plasma nitrided gate dielectrics are reported, aiming for sub-50 nm gate length CMOS applications. The impacts of plasma nitridation conditions on DC characteristics were investigated extensively by changing nitrogen plasma pressure, plasma immersion time, or plasma generation power. N B T l has been also investigated and the lifetime at 105C & 0.85 V operation i s estimated to be about I O years. The final current drives of 690 pA / pm for nFET and 301 pA / pm for pFET at Vdd = 0.85 V (loff = 100 nA / pm) have been achieved in sub-50 nm CMOS with optimized plasma nitrided gate dielectric with EOT

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We report a comparative study of the quantal and classical treatments of single-electron charge transfer from the L and K shells of Li(ls22s) in collisions with He2+ ions at intermediate energies. Quantal calculations have been performed using coupledstate atomic orbital expansions with up to 43 pseudostates in the basis, within the impact parameter formalism, for impact energies of 8 to 2000 keV lab. Classical trajectory Monte Carlo calculations for L-shell capture, using a model potential for the active electron, have been performed for impact energies from 50 to 400 keV, and using an effective-charge model for K-shell capture at impact energies from 600 to 2000 keV lab. The quantal results are in close agreement with experiment over the whole energy range for the total capture cross section. The classical results give a good account of the shape of the cross section curve and are everywhere within *30% of the quantal values. A simple binning model applied to the classical results yields cross sections for capture into final n states which are in agreement with the quantal ones to the same accuracy.

We developed the post CMIP cleaning process using cavitation jet in addition to roll sponge cleaning. In this presentation, we discuss the process damage which had been encountered during the cleaning process development using high pressure water. One was erosion and the other was electrostatic charging damage due to high impinging pressure.The tool parameters of cavitation jet were investigated in order to control the cavitation effect for the wafer cleaning process.These process damage were eliminated by control of cavitation power keeping the occurrence of cavity growth and control of the exposure time to the device by cavitation jet.After that, superior cleaning performance was demonstrated by using the combination of cavitation jet and roll sponge cleaner for wafers after CMP.