Influence of single and double interlayers on the electrical and current transport mechanism of Mo/n-Si Schottky diode and its microstructural and chemical properties

Manjunath, V.; Reddy, B. S. R.; Chalapathi, U.; Son, Boseong; Kim, Huijin; Ahn, Chang-Hoi; Park, Si-Hyun

doi:10.1007/s00339-023-06664-4

Cited by 2 publications

(6 citation statements)

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“…Interestingly, the log-log plot of the forward I-V characteristics of ZnONRs displays two linear transition regions, labeled I and II (see figure 8(b) red line). The observation agreed with the previous literature [48,50]. On the contrary, the ZnONRs/NiO heterojunction diode displays three linear transition regions as shown in figure 8(a) green line.…”

Section: Electrical Characterizationsupporting

confidence: 93%

“…Our observations are in good agreement with the literature [47,49,51]. These results indicate that the current follows a linear relationship with I-V characteristics, which is attributed to the ohmic behaviour caused by the tunnelling of charge carriers between the states at the interface [48]. The linear fit of the regions II of ZnONRs and ZnONRs/NiO heterostructure gives m values of 2.67 and 5.64, respectively (see figure 8(b)).…”

Section: Electrical Characterizationsupporting

confidence: 91%

“…It is well known that the log-log plot of the forward I-V characteristics can be used to determine the current transport mechanism in the Schottky diode. The log-log plot of the forward I-V characteristics exhibits a power law behaviour (equation ( 3)) of the current as ascribed in [48,49].…”

Section: Electrical Characterizationmentioning

confidence: 84%

“…The m value of ZnONRs is slightly higher than 2. This suggests that space-charge-limited current (SCLC) may be the dominant current transport mechanism [48]. On the other hand, the value of 5.64 obtained for ZnONRs/NiO heterostructure is indicative of the trap-charge-limited current (TCLC) transport mechanism [49].…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…It is well known that any imperfections or defects at the interface can lead to higher leakage currents as they offer extra pathways for the flow of charge carriers [47]. To further address this aspect, the diode ideality factor (n) Au/ZnONRs/FTO and Au/NiO/ ZnONRs/FTO heterojunction diode was estimated as described in [48]. The Au/ZnONRs/FTO diode demonstrated an ideality factor of 1.6, which is lower than the corresponding 2.0 value observed in the Au/NiO/ ZnONRs/FTO heterojunction diode.…”

Section: Electrical Characterizationmentioning

confidence: 99%

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On the properties of ZnO nanorods (ZnO NRs)/NiO heterostructure prepared by double chemical bath deposition

Mwankemwa,

Mwakyusa

2024

Phys. Scr.

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We report on the ZnONRs and ZnONRs/NiO heterostructure synthesized by the chemical bath deposition technique. The samples were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy, Raman spectroscopy, and UV-VIS spectroscopy techniques. XRD, Raman spectroscopy, and SEM analysis revealed the formation of ZnONRs/NiO heterostructure. Raman spectra showed a decrease in intensity of low-frequency non-polar and active (E2 (low)) vibrational mode when NiO is deposited onto ZnONRs. The PL spectra revealed ultraviolet and visible emission bands, whose intensities decreased when NiO grew onto ZnONRs. The Au/NiO/ZnONRs/FTO heterostructure Schottky diode performed better than the Au/ZnONRs/FTO Schottky diode. The Au/NiO/ZnONRs/FTO heterojunction demonstrated a current rectification ratio of 3.03 × 102 at ±2 V and a forward current of 1.51 × 10-3 A, which is higher than that of Au/ZnONRs/FTO having a rectification ratio of 6.79 × 101 at ±2 V and a forward current of 1.651 × 10-5 A.

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Section: Electrical Characterizationsupporting

confidence: 93%