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The electrical properties of Au/Bi 0.5 Na 0.5 TiO 3 (BNT)-BaTiO 3 (BT)/n-GaN metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range from 120 K to 420 K by current-voltage and capacitance-voltage methods. The Au/BNT-BT/n-GaN MIS structures demonstrate nonideal behaviors indicating the presence of a nonuniform distribution of interface states. Experimental results revealed that the barrier height (U bo ), ideality factor (n), and interface state density (N ss ) of the Au/BNT-BT/n-GaN MIS structures are strongly temperature dependent. It is found that N ss decreases with an increase in temperature. Further, it is observed that U bo increases and n decreases with increasing temperature, which is attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at the interface. The temperature-dependent I-V characteristics of the Au/BNT-BT/n-GaN MIS structures demonstrate the presence of a double GD having mean BHs of 1.07 eV and 1.91 V and standard deviations of 0.118 V and 0.214 V. Moreover, the inhomogeneous BH is found to be correlated with N ss , because U bo becomes smaller with increasing N ss . This indicates that the lateral inhomogeneity of the BH is connected to the nonuniform distribution of the density of states at the interface. Further, the conduction mechanism dominating the reverse-bias leakage current in the MIS structure is investigated.

In this study, the facile synthesis of SnO2 quantum dot (QD)-garnished V2O5 nanobelts exhibiting significantly enhanced reversible capacity and outstanding cyclic stability for Li+ storage was achieved. Electrochemical impedance analysis revealed strong charge transfer kinetics related to that of V2O5 nanobelts. The SnO2 QD-garnished V2O5 nanobelts exhibited the highest discharge capacity of ca. 760 mAhg−1 at a density of 441 mAg−1 between the voltage ranges of 0.0 to 3.0 V, while the pristine V2O5 nanobelts samples recorded a discharge capacity of ca. 403 mAhg−1. The high capacity of QD-garnished nanobelts was achieved as an outcome of their huge surface area of 50.49 m2g−1 and improved electronic conductivity. Therefore, the as-presented SnO2 QD-garnished V2O5 nanobelts synthesis strategy could produce an ideal material for application in high-performance Li-ion batteries.

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