2014
DOI: 10.1007/s11664-014-3481-y
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Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

Abstract: The electrical properties of Au/Bi 0.5 Na 0.5 TiO 3 (BNT)-BaTiO 3 (BT)/n-GaN metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range from 120 K to 420 K by current-voltage and capacitance-voltage methods. The Au/BNT-BT/n-GaN MIS structures demonstrate nonideal behaviors indicating the presence of a nonuniform distribution of interface states. Experimental results revealed that the barrier height (U bo ), ideality factor (n), and interface state density (N ss ) of the Au/B… Show more

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Cited by 25 publications
(6 citation statements)
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“…Conferring to the base of a TE mechanism with a Gaussian distribution (GD) of the BHs. [48][49][50][51][52][53] There was an indication GD of BH is the Φbo vs n scheme. For this purpose, Plot was drawn to find any indication of GD of the BHs, and they are signified in Plot 9.…”
Section: Resultsmentioning
confidence: 99%
“…Conferring to the base of a TE mechanism with a Gaussian distribution (GD) of the BHs. [48][49][50][51][52][53] There was an indication GD of BH is the Φbo vs n scheme. For this purpose, Plot was drawn to find any indication of GD of the BHs, and they are signified in Plot 9.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 5 presents the UV-Vis absorption spectrum in the wavelength range from 200 nm to 800 nm and the band gap energy profile of ZnTiO 3 nanostructures using Tauc's equation. This equation gives the optical band gap by [16]:…”
Section: Uv-vis Spectroscopymentioning
confidence: 99%
“…with α being the absorption-coefficient, hν the emitted photon energy, C an arbitrary constant and E g band gap energy [16].…”
Section: Uv-vis Spectroscopymentioning
confidence: 99%
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“…In addition, BaTiO 3 is a great photorefractive material and also shows ferroelectric features. Due to these properties, it widely uses in the electronic and optoelectronic devices such as detectors, capacitors, and sensors [28,29]. One of the best polymers used to fabricate the MPS SDs, is the polyvinylpyrrolidone (PVP).…”
Section: Introductionmentioning
confidence: 99%