Besides the low-frequency electromagnetic body-processes measurable through the electroencephalography (EEG), electrocardiography (ECG), etc. there are processes that do not need external excitation, emitting light within or close to the visible spectra. Such ultraweak photon emission (UPE), also named biophoton emission, reflects the cellular (and body) oxidative status. Recently, a growing body of evidence shows that UPE may play an important role in the basic functioning of living cells. Moreover, interesting evidences are beginning to emerge that UPE may well play an important role in neuronal functions. In fact, biophotons are byproducts in cellular metabolism and produce false signals (e.g., retinal discrete dark noise) but on the other side neurons contain many light sensitive molecules that makes it hard to imagine how they might not be influenced by UPE, and thus UPE may carry informational contents. Here, we investigate UPE in the brain from different points of view such as experimental evidences, theoretical modeling, and physiological significance.

In this paper, using the Optical Emission Spectroscopy technique, the physical properties of a fabricated pulsed DBD plasma jet are studied. Ar/N 2 gaseous mixture is taken as operational gas, and Ar contribution in Ar/N 2 mixture is varied from 75 to 95%. Through the optical emission spectra analysis of the pulsed DBD plasma jet, the rotational, vibrational and excitation temperatures and density of electrons in plasma medium of the pulsed plasma jet are obtained. It is seen that, at the wavelength of 750.38 nm, the radiation intensity from the Ar 4p ? 4 s transition increases at the higher Ar contributions in Ar/N 2 mixture. It is found that, for 95% of Ar presence in the mixture, the emission intensities from argon and molecular nitrogen are higher, and the emission line intensities will increase nonlinearly. In addition, it is observed that the quenching of Ar * by N 2 results in the higher intensities of N 2 excited molecules. Moreover, at the higher percentages of Ar in Ar/N 2 mixture, while all the plasma temperatures are increased, the plasma electron density is reduced.

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The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm2O3) polymer interlayers on the electrical characteristics in detail. The fabricated reference sample Au/n-Si, Au/PVC/n-Si, and Au/(PVC: Sm2O3)/n-Si were named as Metal-Semiconductor (MS), Metal-Polymer-Semiconductor (MPS1), and MPS2 structure, respectively. The procedure of providing Sm2O3 is also described in detail. XRD, FE-SEM), EDX, and UV–vis spectroscopy, have been applied to study the mean crystalline structure, morphology, elemental characterization, and optical features of the provided Sm2O3. After structural analysis, the I-V features were performed in the wide range voltage (±3.5 V), and then, the basic electronic parameters of these structures were extracted from various techniques and compared with each other. Experimental results show that (PVC: Sm2O3) leads to an increase of barrier-height (BH), rectifying-rate shunt-resistance (R sh ), and decrease of ideality-factor (n), surface-states (N ss ). The RR of the MPS2 structure was found 117 times higher than the MS structure. The energy-dependent profile of N ss was also obtained from the forward bias I–V data by considering voltage-dependent n and BH. The plots reverse-bias characteristics show that Schottky-emission (SE) type conduction mechanism is effective for MS structure, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.

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