2012
DOI: 10.1016/j.jallcom.2012.06.069
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Influence of sintering temperature on screen printed Cu2ZnSnS4 (CZTS) films

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Cited by 36 publications
(13 citation statements)
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References 30 publications
(33 reference statements)
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“…Although RTA sintering effectively densified CIS absorber, ethyl cellulose remained in the annealed absorption layer and the composite absorber layer consisted of ethyl cellulose/CIS composite shell/core structure, which lowered the cell conversion efficiency significantly. Care must also be taken in preparing stoichiometric CIGS film due to its instability during high temperature RTA processing [20]. The phase boundary is located between 17°C and 133°C for CuIn 0.25 Ga 0.75 Se 2 and CuIn 0.75 Ga 0.25 Se 2 .…”
Section: Introductionmentioning
confidence: 99%
“…Although RTA sintering effectively densified CIS absorber, ethyl cellulose remained in the annealed absorption layer and the composite absorber layer consisted of ethyl cellulose/CIS composite shell/core structure, which lowered the cell conversion efficiency significantly. Care must also be taken in preparing stoichiometric CIGS film due to its instability during high temperature RTA processing [20]. The phase boundary is located between 17°C and 133°C for CuIn 0.25 Ga 0.75 Se 2 and CuIn 0.75 Ga 0.25 Se 2 .…”
Section: Introductionmentioning
confidence: 99%
“…In order to cut the cost, several research groups have tried to prepare CZTS films under non-vacuum conditions. [19][20][21] In this paper, we explored a sol-gel method to prepare CZTS thin films using ethylenediamine (EN) as the chelating agent in the precursor. EN played an important role in the process of preparing stable CZTS sol-gel precursor and fabricating high-quality CZTS films.…”
Section: Introductionmentioning
confidence: 99%
“…1. [20]. The phase assignment is difficult for the sample due to noisy spectrum and large number of overlapping peaks.…”
Section: Resultsmentioning
confidence: 99%
“…For the film CZTS-300-450 the band gap was found to be 1.49eV and that for CZTS-300-500 was 1.63eV. Band gap increased with increase in annealing temperature due to Burstein-Moss effect [20] (carrier concentration increment with temperature shifts the band gap to higher value). These band gap values are consistent with the reported values [33].…”
Section: Optical Properties Measured By Uv-vis Spectrophotometermentioning
confidence: 92%
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