Influence of sintering temperatures of ceramic targets on microstructures and photoelectric properties of titanium-doped ZnO nano-films

Chen, Zhenying; Li, Fēi; Chen, Xiaowei; Xu, Shoulei; Xiong, Dingkang; Huang, Yan; Deng, Wen

doi:10.1007/s10854-016-6104-y

Cited by 7 publications

(7 citation statements)

References 18 publications

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“…Ti 4+ can easily enter the ZnO lattice to replace Zn 2+ , and Ti 4+ ions with higher valence than Zn 2+ can provide more free electrons. This would increase carrier concentration and decrease resistivity [17,18]. Based on the above analysis, and with reference to the fact that trace TiO 2 is often added to the raw materials of the ZnO-based varistor, N-type titanium doped ZnO films (TZO) were obtained by magnetron sputtering using a TiO 2 -doped ZnO target.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

et al. 2023

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Ti-doped ZnO (TZO) and Bi2O3 thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi2O3, and TZO/Bi2O3 films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10−3 Ω·cm). However, the Bi2O3 film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 102 Ω·cm). The I–V curve of TZO/Bi2O3 composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi2O3 films.

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Section: Introductionmentioning

confidence: 99%

Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

et al. 2023

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“…In particular, doping by TiO 2 increase the density of the ZnO ceramics by forming spinel phases at the grain boundaries. 15 On the other hand, MgO doping limits the concentration of oxygen vacancies, improve the sintering conditions under low temperatures and adjust the thermal behavior of electrical resistors. Previous investigation of (Mg, Ti, Al) co-doping of ZnO-based ceramics pointed out the possibilities to lower the sintering temperature and to fine the electrical conductivity at higher values.…”

Section: Introductionmentioning

confidence: 99%

“…However, former reports 11–14 dealing with Mg and Ti doping of ZnO ceramics have pointed out the role of such substitutional elements on the thermal and microstructural features of the doped ceramics. In particular, doping by TiO 2 increase the density of the ZnO ceramics by forming spinel phases at the grain boundaries 15 . On the other hand, MgO doping limits the concentration of oxygen vacancies, improve the sintering conditions under low temperatures and adjust the thermal behavior of electrical resistors.…”

Section: Introductionmentioning

confidence: 99%

Microstructural and electrical features of highly conducting indium co‐doped ZnO‐based ceramics

Chen

Tian

et al. 2022

J Am Ceram Soc.

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In this work, we developed experimental approaches on indium co‐doped ZnO‐based ceramics from the synthesis to the characterizations and analysis of physical features in the aim to achieve the formation of highly conducting ceramics with controlled nonlinearity. Different doping molar ratios of indium were used and the synthesis of the ceramics was realized by the conventional solid‐state reaction method which was then followed by a sintering under air (A), nitrogen (N), or a mixture of nitrogen and carbon monoxide (NC) atmosphere with different reduction capabilities. The structure, morphology, electrical investigations, and the electronic transport analysis were conducted on the different ZnO co‐doped ceramics as functions of the indium incorporation and the used sintering atmosphere, A, N, or NC. Suitable indium doping of 0.3 mol% and the use of highly reducing sintering atmosphere (NC) ensure the formation of ZnO‐based ceramics with an electrical conductivity up to (103 S/cm) and a quasi‐linear behavior on the electrical characteristic I–V. We discussed the obtained performances by correlating the charge transport with the microstructure of the ceramics, the composition, and the structure of grain boundaries as well as the solubility of indium in the host ZnO ceramic grains.

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“…It is well known that the deposition conditions such as substrate temperature, deposition rates, sputtering power, substrate type and bias voltage have effects on the properties of thin films [2,20]. In the past few years, many experimental studies were focused on the effects of sputtering RF power on the characteristics of the deposited films.…”

Section: Introductionmentioning

confidence: 99%

Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

et al. 2021

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In this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

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Influence of sintering temperatures of ceramic targets on microstructures and photoelectric properties of titanium-doped ZnO nano-films

Cited by 7 publications

References 18 publications

Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

Microstructural and electrical features of highly conducting indium co‐doped ZnO‐based ceramics

Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

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