Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films

Devasia, Archana; Kurinec, Santosh; Campbell, Kristy A.; Raoux, Simone

doi:10.1063/1.3385781

Cited by 21 publications

(15 citation statements)

References 18 publications

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“…14, metal ions of the same polarity from the M-Se layer are incorporated into the active layer, along with Ag þ from the Ag layer. This was previously shown using devices comprising only Ge 2 Se 3 /SnSe layers and no Ag [123] and in stacked thin films [149], [150].…”

Section: B Layered Chalcogenide Devicesmentioning

confidence: 69%

Reconfigurable Memristive Device Technologies

et al. 2015

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In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxidebased memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments

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Section: B Layered Chalcogenide Devicesmentioning

confidence: 69%

Reconfigurable Memristive Device Technologies

et al. 2015

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“…However, several alternate chalcogenide compositions are being explored in an attempt to ascertain new materials with superior performance as well as for developing next generation of non-volatile memories. The nanosecond switching in GeTe alloy films in confined geometry together with high resistance change upon crystallization and the non-volatile retention of data is very promising for its device applications [4]. It has been reported by high resolution X-ray photoelectron spectroscopy that the structural environment of Ge atom changes during phase transition and not its chemical environment [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films

Kumar

Chander

Sathiaraj

et al. 2015

Materials Science in Semiconductor Processing

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“…This device is comprised of chalcogenide material layers (Figure 1) (Campbell, 2008a,b, 2017). It uses a Ge 2 Se 3 chalcogenide layer, which is activated for analog resistance tuning operation by Sn ions that migrate from an adjacent SnSe layer during the initial forming process (Campbell and Anderson, 2007; Devasia et al, 2010, 2012). A layer of ternary GeSeAg is the ion source during operation.…”

Section: Introductionmentioning

confidence: 99%

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses

Campbell

Drake

Smith

2016

Front. Bioeng. Biotechnol.

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Ion-conducting memristors comprised of the layered materials Ge2Se3/SnSe/Ag are promising candidates for neuromorphic computing applications. Here, the spike-timing dependent plasticity (STDP) application is demonstrated for the first time with a single memristor type operating as a synapse over a timescale of 10 orders of magnitude, from nanoseconds through seconds. This large dynamic range allows the memristors to be useful in applications that require slow biological times, as well as fast times such as needed in neuromorphic computing, thus allowing multiple functions in one design for one memristor type—a “one size fits all” approach. This work also investigated the effects of varying the spike pulse shapes on the STDP response of the memristors. These results showed that small changes in the pre- and postsynaptic pulse shape can have a significant impact on the STDP. These results may provide circuit designers with insights into how pulse shape affects the actual memristor STDP response and aid them in the design of neuromorphic circuits and systems that can take advantage of certain features in the memristor STDP response that are programmable via the pre- and postsynaptic pulse shapes. In addition, the energy requirement per memristor is approximated based on the pulse shape and timing responses. The energy requirement estimated per memristor operating on slower biological timescales (milliseconds to seconds) is larger (nanojoules range), as expected, than the faster (nanoseconds) operating times (~0.1 pJ in some cases). Lastly, the memristors responded in a similar manner under normal STDP conditions (pre- and post-spikes applied to opposite memristor terminals) as they did to the case where a waveform corresponding to the difference between pre- and post-spikes was applied to only one electrode, with the other electrode held at ground potential. By applying the difference signal to only one terminal, testing of the memristor in various applications can be achieved with a simplified test set-up, and thus be easier to accomplish in most laboratories.

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Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films

Cited by 21 publications

References 18 publications

Reconfigurable Memristive Device Technologies

Reconfigurable Memristive Device Technologies

Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses

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