Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Liu, H.Y.; Tang, Guangsheng; Zeng, Fei; Pan, Feng

doi:10.1016/j.jcrysgro.2012.10.008

Cited by 94 publications

(56 citation statements)

References 24 publications

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“…9,38,39 In our case, however, it is more likely that it is from Si(200) reflection because the peak is narrower than the AlN peaks. Furthermore, Liu et al 12 reached a similar conclusion.…”

Section: Crystallinitymentioning

confidence: 64%

“…In earlier research of sputtered AlN on (100) Si, a good control of stress with sputtering N 2 concentration, pressure, and power has been demonstrated. 12 This general advantage of the established film property control of sputtering has thus been successfully shown. The AlN samples with seed layers show also moderate stresses although the S_Ti/Al film has clearly the highest stress from the sputtered samples.…”

Section: Residual Stressmentioning

confidence: 90%

“…Consequently, the sputtering process effects on the mechanical properties of coatings have been widely studied. [9][10][11][12][13] Magnetron sputtered AlN has been successfully utilized, for example, on piezoelectric nanoelectromechanical system (NEMS) fabrication, 14 which requires exact stoichiometry, minor residual stress, highly crystalline hexagonal wurtzite structure, and low roughness. Nevertheless, sputtered AlN has been shown to exhibit inhomogeneous microstructure a) Electronic mail: perttu.sippola@aalto.fi (columnar crystals, several orientations, and pebblelike surface morphology), especially in the beginning of the film growth.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

Sippola

Perros

Ylivaara

et al. 2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum-ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N 2 /H 2 ), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm. Time-of-flight elastic recoil detection analysis showed the sputtered films to have lower impurity concentration with an Al/N ratio of 0.95, while the Al/N ratio for the PEALD films was 0.81-0.90. The mass densities were ∼3.10 and ∼2.70 g/cm 3 for sputtered and PEALD AlN, respectively. The sputtered films were found to have higher degrees of preferential crystallinity, whereas the PEALD films were more polycrystalline as determined by x-ray diffraction. Nanoindentation experiments showed the elastic modulus and hardness to be 250 and 22 GPa, respectively, for sputtered AlN on the (110) substrate, whereas with PEALD AlN, values of 180 and 19 GPa, respectively, were obtained. The sputtered films were under tensile residual stress (61-421 MPa), whereas the PEALD films had a residual stress ranging from tensile to compressive (846 to −47 MPa), and high plasma bias resulted in compressive films. The adhesion of both films was good on Si, although sputtered films showed more inconsistent critical load behavior. Also, the substrate underneath the sputtered AlN did not withstand high wear forces as with the PEALD AlN. The coefficient of friction was determined to be ∼0.2 for both AlN types, and their wear characteristics were almost identical. Published by the AVS.

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“…9,38,39 In our case, however, it is more likely that it is from Si(200) reflection because the peak is narrower than the AlN peaks. Furthermore, Liu et al 12 reached a similar conclusion.…”

Section: Crystallinitymentioning

confidence: 64%

Section: Residual Stressmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

Sippola

Perros

Ylivaara

et al. 2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…Aluminum nitride has a variety of excellent physical properties, such as a high melting point (3273 K), high thermal conductivity (285 W/mK), high direct band gap (6.2 Ev), good dielectric constant (8.5) and high hardness (about ~ 2×103 kgf mm-2) [13,14,15]. Common ways of depositing aluminum nitride films include DC and RF magnetron sputtering [13][14][15][16][17][18], chemical vapor deposition [19,20], and molecular beam epitaxy [21]. However, the CVD and MBE methods can only be used at high temperatures, and this limits the base materials that can be used, and if the resulting grains are too big then this will lead to a rough surface, and so it will not be possible to easily manufacture electrodes on the films.…”

Section: Introductionmentioning

confidence: 99%

High-quality AlN films grown on chemical vapor-deposited graphene films

Chen

Hsiu-Hao

David

2016

MATEC Web of Conferences

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Abstract.We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

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“…In order to use an AlN thin film as the piezoelectric layer in microdevices or nanodevices, it is very important to establish how well it grows onto different kinds of substrates and buffer layers, as the film is expected to present both smooth surface and highly preferential orientation …”

Section: Introductionmentioning

confidence: 99%

Growth ofc-axis-oriented aluminum nitride thin films onto different substrates and buffer layers

Mori

Pace

Andrade

et al. 2014

Surf. Interface Anal.

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The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in samples grown at a lower 200 °C temperature directly on glass, Si, or flexible polyimide. In applications where thin and smooth piezoelectric films are necessary, c‐axis‐oriented AlN can be grown onto a wide range of different surfaces: conducting, insulating, ferromagnetic, antiferromagnetic, or flexible. Copyright © 2014 John Wiley & Sons, Ltd.

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Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Cited by 94 publications

References 24 publications

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

High-quality AlN films grown on chemical vapor-deposited graphene films

Growth ofc-axis-oriented aluminum nitride thin films onto different substrates and buffer layers

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