Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Sakamoto, Michiru; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki; Kuwano, Noriyuki

doi:10.1063/1.2405849

Cited by 44 publications

(25 citation statements)

References 26 publications

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“…The pressure dependence of the universal transition region has been studied by a some authors (Fardeheb-Mammeri et al 2008;Kamohara et al 2006;Vashaei et al 2009). Figure 1 shows the FWHM evolution of the rocking curve of the (0002) reflection in A1N films as a function of the process pressure for the four pressures studied, 2, 4, 6 and 8 mTorr.…”

Section: Resultsmentioning

confidence: 99%

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

2011

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In this work, we analyze the influence of the processing pressure and the substrate-target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AIN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvaturean optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target-substrate distance as it was varied in between 30 and 70 mm.

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Section: Resultsmentioning

confidence: 99%

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

2011

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“…4 Meanwhile, it was reported that the polarity orientation distribution of piezoelectric films can also influence their piezoelectric response. 5 Grains with metal polarity and those with oxide polarity show different piezoelectric properties. The macroscopic piezoelectric response of the films is the result of the polarity orientation distribution.…”

Section: Introductionmentioning

confidence: 99%

“…Piezoresponse force microscopy (PFM), originally used to detect domain structures, polarization switching, and for local hysteresis spectroscopy in ferroelectric materials, [7][8][9] has been extended to characterize piezoelectric semiconductors, such as GaN, 10,11 AlN, 3,5 and ZnO. 1,[12][13][14][15] Several investigations on piezoelectric properties of nanostructures 1,14 and films 12,13 have been carried out with PFM recently, including determination of piezoelectric coefficient 12 and observation of spontaneous polarization and inversion domains.…”

Section: Introductionmentioning

confidence: 99%

Local Piezoelectricity and Polarity Distribution of Preferred c-Axis-Oriented ZnO Film Investigated by Piezoresponse Force Microscopy

Yang

2010

Journal of Elec Materi

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The piezoelectric properties and polarity distribution of preferred c-axis-oriented ZnO films have been investigated using piezoresponse force microscopy (PFM). Simultaneous imaging of the morphology, as well as the magnitude and phase of the out-of-plane and in-plane piezoresponse, was performed by PFM on the ZnO films. The out-of-plane piezoresponse with two primary antiparallel spontaneous polarization orientations (upward and downward), which is perpendicular to the surface of the film, has been found, and the spontaneous polarization orientation of most grains is upward. Meanwhile, the in-plane piezoresponse has also been detected in some of the grains. In addition, the polarization orientation of the individual grains is discussed and determined by analyzing phase images of the out-of-plane and in-plane piezoresponse.

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“…As AlN exhibits piezoelectric property along its c-axis, AlN films for BAW resonators should be c-axis orientated and the fabrication conditions for c-axis deposition have been investigated. It is generally known that the texture of bottom electrode influences the preferred orientation of following AlN and (111) plane of face centered cubic (fcc) and (110) of body centered cubic (bcc) enhance the c-axis texturing [1,2]. Thus, it is essential to fabricate strongly oriented bottom metal layer.…”

Section: Introductionmentioning

confidence: 99%

Insertion effect of the 3-nm-thick Co(Pt) layer on AlN preferred orientation and residual stress in the c-axis textured AlN film

et al. 2013

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The effect of the continuously inserted 3-nm-thick Co(Pt) layer on the preferred orientation of AlN film is investigated, and highly c-axis textured AlN film has been obtained. According to high resolution transmission electron microscope observations, the preferred orientation of sputter-deposited AlN film is improved from polycrystalline to (001) texture at the interface between AlN and Co(Pt)(111). The texture of AlN films are also examined using an xray diffractometer equipped with a two dimensional positive sensitive detector. The x-ray rocking curve full width at half maximum of 002 AlN of (001) textured AlN with the Co(Pt) layer is 2.7°, and the residual stress of such specimen is 1.6 GPa in tensile stress.

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Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

Cited by 44 publications

References 26 publications

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

Local Piezoelectricity and Polarity Distribution of Preferred c-Axis-Oriented ZnO Film Investigated by Piezoresponse Force Microscopy

Insertion effect of the 3-nm-thick Co(Pt) layer on AlN preferred orientation and residual stress in the c-axis textured AlN film

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