2007
DOI: 10.1103/physrevb.75.054408
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Influence of strain on the magnetization and magnetoelectric effect inLa0.7A0.3MnO3PMNPT

Abstract: We investigate the influence of a well-defined reversible biaxial strain ≤ 0.12 % on the magnetization ( M ) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20 -50 nm thick films. This is

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Cited by 559 publications
(421 citation statements)
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“…32 Another popular approach towards the engineering of electric-field-controlled magnetic properties is based on interfacial mechanical strain coupling between ferromagnetic and ferroelectric materials in multiferroic hybrids. [4][5][6]8,10,12,[21][22][23][24][25][26][27][28][29][30][31]38 In this case, transfer of lattice strains across interfaces alters the magnetoelastic anisotropy of a ferromagnetic layer via inverse magnetostriction. Anisotropy modulations of more than one order of magnitude have been obtained, which has enabled full electric-field control of the magnetization orientation in two-phase multiferroic systems.…”
Section: Introductionmentioning
confidence: 99%
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“…32 Another popular approach towards the engineering of electric-field-controlled magnetic properties is based on interfacial mechanical strain coupling between ferromagnetic and ferroelectric materials in multiferroic hybrids. [4][5][6]8,10,12,[21][22][23][24][25][26][27][28][29][30][31]38 In this case, transfer of lattice strains across interfaces alters the magnetoelastic anisotropy of a ferromagnetic layer via inverse magnetostriction. Anisotropy modulations of more than one order of magnitude have been obtained, which has enabled full electric-field control of the magnetization orientation in two-phase multiferroic systems.…”
Section: Introductionmentioning
confidence: 99%
“…Various studies have been published on electric-field-controlled magnetic effects in recent years, including magnetic domain wall propagation, 1-8 magnetic phase transitions, [9][10][11][12] spin polarization, 13,14 magnetic anisotropy [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] and exchange bias. [33][34][35][36][37] Electric-field control of perpendicular magnetic anisotropy (PMA) would open up new prospects for the realization of high-density magnetic memory and logic technologies operating at low energy consumption levels.…”
Section: Introductionmentioning
confidence: 99%
“…The most commonly used piezoelectric substrate is (1-x)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 , which is a well-known relaxor ferroelectric material with excellent electromechanical and piezoelectric properties for compositions near the morphotropic phase 3 boundary (0.25  x  0.35) [12]. Piezoelectric strain transfer from PMN-PT substrates has, for example, been used to tune the magnetic properties of manganite [13,14], ferrite [15][16][17][18][19], and metallic magnetic films [20][21][22][23], to alter the electrical resistance of magnetic oxides [13,18,[24][25][26], to demonstrate straincontrolled light emission from semiconductor heterostructures [27,28], and to tailor the properties of graphene [29]. In addition, strain-modulation of magnetic properties on a microscopic scale has recently been demonstrated in ferromagnetic-ferroelectric hybrids [30][31][32], which has opened new ways to electric control of ferromagnetic domain formation and magnetic domain wall motion [33,34].…”
mentioning
confidence: 99%
“…In rhombohedral Pb(Mg 1/3 Nb 2/3 ) 0. 72 Ti 0.28 O 3 (PMN-PT) single crystals with high piezoelectricity, Thiele et al [27] discovered that the T c of LSMO thin film increased by 19 K and the ME coefficient was about 6×10 −8 s m −1 , which further confirmed the effective contribution from the strain transfer across the interface on the ME coupling. In principle, mechanical-stress-controlled Mn-O bond length can be assumed as the microscopic origin of the ferromagnetic states of the LSMO thin film.…”
Section: Strain Effectsmentioning
confidence: 61%