Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy

Ponchet, Anne; Corre, Alain Le; Godefroy, A.; Salaun, S.; Poudoulec, A.

doi:10.1016/0022-0248(95)00140-9

Cited by 55 publications

(27 citation statements)

References 37 publications

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“…The observation of an anisotropy in both composition modulation and surface topology between the two 0 1 1 hi directions in the 0.6% tensile strained In 0.65 Ga 0.35 As 0.6 P 0.4 film found in this study agrees with previous observations in a 0.6% tensile strained In 0.45 Ga 0.55 As film [5]. Similar results have been reported by other authors in III-V and II-VI alloy epitaxy systems [3,4,7,16,17]. In this study, however, we observed another interesting phenomenon: with an increase in the misfit between substrate and film from 0.6% to 2%, the composition modulation and surface undulation are no longer anisotropic but occur in both of the ½0 % 1 11 and [0 1 1] directions.…”

Section: Discussionsupporting

confidence: 83%

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Weatherly

2001

Journal of Crystal Growth

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Composition modulations in tensile strained In1-xGxAsyP1-y films grown on (1 0 0 ) InP substrates Wu, X.; Weatherly, G. C.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744459&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744459&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1016/S0022-0248(01)01574-3 Growth, 233, 1, pp. 88-98, 2001 Journal of Crystal Growth 233 (2001) Journal of Crystal AbstractThe correlation between compositional modulations and surface morphology has been studied by transmission electron microscopy (TEM) and atomic force microscopy (AFM) for a series of tensile strained In 1Àx Ga x As y P 1Ày films grown by molecular beam epitaxy (MBE) on (1 0 0) InP substrates. At low values of strain (0.6%), both a quaternary In 0.65 Ga 0.35 As 0.6 P 0.4 film and ternary In 0.45 Ga 0.55 As film show anisotropic behavior (both with regards to composition modulation and surface morphology) between [0 1 1] and ½0 % 1 11 cross-sections. The composition modulation and surface undulation are prominent only in the ½0 % 1 11 cross-section. The In 0.45 Ga 0.55 As films develop a coarse faceted structure on (4 1 1) and 4 % 1 1 % 1 1 ÀÁ planes after B100 nm of film growth. Composition modulations (scaling with the size of the facets) are observed in films 0.1-1 mm thick, but in thicker films (>1 mm) the faceted structure disappears while the scale of the compositional modulations decays to that found in unstrained films. On...

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Section: Discussionsupporting

confidence: 83%

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Weatherly

2001

Journal of Crystal Growth

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“…3,8 This is similar to single-layer film growth: [20][21][22]27,28 for large enough deposition rate, the morphological perturbation of layer surface does not have enough time to develop through surface diffusion, since it is buried and frozen by fast subsequent materials deposition.…”

Section: B Stability Resultsmentioning

confidence: 98%

Stress-driven instability in growing multilayer films

Huang

Desai

2003

Phys. Rev. B

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We investigate the stress-driven morphological instability of epitaxially growing multilayer films, which are coherent and dislocation-free. We construct a direct elastic analysis, from which we determine the elastic state of the system recursively in terms of that of the old states of the buried layers. In turn, we use the result for the elastic state to derive the morphological evolution equation of surface profile to first order of perturbations, with the solution explicitly expressed by the growth conditions and material parameters of all the deposited layers. We apply these results to two kinds of multilayer structures. One is the alternating tensile/compressive multilayer structure, for which we determine the effective stability properties, including the effect of varying surface mobility in different layers, its interplay with the global misfit of the multilayer film, and the influence of asymmetric structure of compressive and tensile layers on the system stability. The nature of the asymmetry properties found in stability diagrams is in agreement with experimental observations. The other multilayer structure that we study is one composed of stacked strained/spacer layers. We also calculate the kinetic critical thickness for the onset of morphological instability and obtain its reduction and saturation as number of deposited layers increases, which is consistent with recent experimental results. Compared to the single-layer film growth, the behavior of kinetic critical thickness shows deviations for upper strained layers.

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“…4(a), it is thought that the OS layer is elastically relaxed by introducing a lateral modulation during the top layer growth. Similar lateral modulations which are seen along only the [110] direction have been observed, and is known as one of relaxation mechanisms in a multiple quantum well (QW) structures [7]. The OS layer in a solar cell structure is like a compressive well in a single QW structure.…”

Section: Discussionmentioning

confidence: 84%

Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

Sasaki

Norman

Romero

et al. 2013

Phys. Status Solidi C

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Defect characterization in molecular beam epitaxial (MBE) compositionally‐graded InxGa1‐xAs layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in‐plane distribution based on strain relaxation at the top and OS layers. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy

Cited by 55 publications

References 37 publications

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Stress-driven instability in growing multilayer films

Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

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