Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

Bashkirov, S. A.; Gremenok, V. F.; Ivanov, V.A.; Shevtsova, V. V.; Gladyshev, P. P.

doi:10.1016/j.tsf.2015.04.024

Cited by 14 publications

(9 citation statements)

References 40 publications

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“…is also a little lower than experimental data 5.5 [1]. During third-order Birch-Murnaghan equation fitting, ′ 0 B and B 0 are related to one another.…”

Section: Structural Propertiesmentioning

confidence: 58%

“…IV-VI semiconductor compounds have attracted more and more interest in recent years owing to their visible advantages of earth abundance, no toxicity, and high optical absorption [1][2][3][4][5][6][7]. Tin sulfide SnS, as a representative, has been widely used as thin film polarizers, photovoltaic cells, laser materials, sensors, thermoelectric cooling materials, and so on [1,[7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Tin sulfide SnS, as a representative, has been widely used as thin film polarizers, photovoltaic cells, laser materials, sensors, thermoelectric cooling materials, and so on [1,[7][8][9][10]. Particularly, to be a potential candidate for thin film solar cells, its theoretical photovoltaic conversion efficiency of its solar cells can reach 25 % [11].…”

Section: Introductionmentioning

confidence: 99%

“…The ab initio calculations have given somewhat scattered points ranging from 0.69 to 1.6 eV for the indirect and 1.3-1.8 eV for the direct band gap [6,15,[20][21][22][23]. The optical properties of α-SnS were studied by optical, infrared, and Raman spectroscopy, and a pronounced anisotropy of the optical constants was observed [1,14,15,17,21]. Temperature and pressure induced phase transitions of α-SnS also have been reported.…”

Section: Introductionmentioning

confidence: 99%

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Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Liu

Duan

2015

Zeitschrift Für Naturforschung A

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SnS has potential technical applications, but many of its properties are still not well studied. In this work, the structural, thermodynamic, elastic, and electronic properties of α-SnS have been investigated by the plane wave pseudo-potential density functional theory with the framework of generalised gradient approximation. The calculated pressure-dependent lattice parameters agree well with the available experimental data. Our thermodynamic properties of α-SnS, including heat capacity C P , entropy S, and Gibbs free energy relation of -(G T - H 0 ) curves, show similar growth trends as the experimental data. At T = 298.15 K, our C P = 52.31 J/mol·K, S = 78.93 J/mol·K, and -(G T - H 0 ) = 12.03 J/mol all agree very well with experimental data C P = 48.77 J/mol·K and 49.25 J/mol·K, S = 76.78 J/mol·K, and -(G T - H 0 ) = 12.38 J/mol. The elastic constants, together with other elastic properties, are also computed. The anisotropy analyses indicate obvious elastic anisotropy for α-SnS along different symmetry planes and axes. Moreover, calculations demonstrate that α-SnS is an indirect gap semiconductor, and it transforms to semimetal with pressure increasing up to 10.2 GPa. Combined with the density of states, the characters of the band structure have been analysed in detail.

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“…is also a little lower than experimental data 5.5 [1]. During third-order Birch-Murnaghan equation fitting, ′ 0 B and B 0 are related to one another.…”

Section: Structural Propertiesmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Liu

Duan

2015

Zeitschrift Für Naturforschung A

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“…Tin disulfide, first synthesized about 200 years ago [1] , has been applied to various optoelectronic devices and solar collectors [2][3][4][5][6][7][8][9][10][11] . From the experimental perspective, it is a layered semiconductor with a CdI 2 -type structure in which the two close-packed sheets of sulfur atoms sandwich the sheets of tin atoms [12] .…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on the physical properties of SnS₂:Cu thin films deposited by spray pyrolysis

Fadavieslam

2018

J. Semicond.

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The main impetus of the present study is to investigate thin films of tin disulfide that have been doped with copper impurities and prepared on glass substrates by using the spray pyrolysis technique. Also, the influence of the substrate temperature on the structural, optical, and electrical properties of these films are investigated. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical absorption (UV–vis) analyses. The XRD patterns clarify that the thin films possess polycrystalline structures, having a peak associated with the (001) plane of the SnS2 phase. The average crystalline grain sizes were estimated to be within the range 5.7–7.1 nm. The SEM images indicate that the grain size increases from 53 to 114 nm with an increment in the substrate temperature, resulting in an increasing–decreasing trend in the band gap of the thin films. However, the films’ resistance decreases from 92.5 to 0.174 Ω·cm as the substrate temperature increases from 400 to 450 °C. Also, their optical energy band gap depicts an increasing–decreasing trend with the estimated values of 2.81, 3.21, and 3.06 eV at 400, 425, and 450 °C, respectively. The thin films exhibit n-type conductivity.

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Effect of Ag doping on the physical properties of tin-sulfide thin films for optoelectronic applications prepared by spray pyrolysis

Fadavieslam

2018

Appl. Phys. A

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Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

Cited by 14 publications

References 40 publications

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Effect of substrate temperature on the physical properties of SnS₂:Cu thin films deposited by spray pyrolysis

Effect of Ag doping on the physical properties of tin-sulfide thin films for optoelectronic applications prepared by spray pyrolysis

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Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

Cited by 14 publications

References 40 publications

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Effect of substrate temperature on the physical properties of SnS2:Cu thin films deposited by spray pyrolysis

Effect of Ag doping on the physical properties of tin-sulfide thin films for optoelectronic applications prepared by spray pyrolysis

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Effect of substrate temperature on the physical properties of SnS₂:Cu thin films deposited by spray pyrolysis