Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE

Bouravleuv, A. D.; Sibirev, N. V.; Statkutė, G.; Cirlin, G. É.; Lipsanen, Harri; Dubrovskiı̆, V. G.

doi:10.1016/j.jcrysgro.2010.02.010

Cited by 12 publications

(5 citation statements)

References 37 publications

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“…Therefore, they could be incorporated into the NW sidewalls after diffusion processes. It should be stressed that a similar effect has been already observed during the growth of GaAs NWs at relatively high temperatures [37]. Finally, it does not rule out the possibility that the small-diameter segments on the GaAs/Si interface could exist originally and could later manifest themselves during the long-time annealing.…”

Section: Resultsmentioning

confidence: 84%

Thermal decomposition of GaAs nanowires

et al. 2019

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The realization of GaAs nanowire (NW) high-performance quantum devices operated at room temperatures requires that their diameters have to be less than 10 nm. It is shown, that the GaAs NWs with sub 10 nanometers diameters can be fabricated using the thermal decomposition technique. It is demonstrated, that depending on annealing conditions, the NW lengths, as well as shapes, can be modified significantly. The GaAs NWs with bottle-like and diameter-modulated shapes can be obtained. At the first stage of the thermal annealing in the presence of As flux, an increase in NW length was found.

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Section: Resultsmentioning

confidence: 84%

Thermal decomposition of GaAs nanowires

et al. 2019

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“…The observed decrease of the growth rate toward lower temperatures can be attributed only to low cracking efficiencies of TMGa at low temperatures. For the latter, we use the temperature depend ence of [97]:…”

Section: Regular Growth Model In the Stationary Casementioning

confidence: 99%

Understanding the vapor–liquid–solid growth and composition of ternary III–V nanowires and nanowire heterostructures

Dubrovskiı̆

2017

J. Phys. D: Appl. Phys.

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Based on the recent achievements in vapor–liquid–solid (VLS) synthesis, characterization and modeling of ternary III–V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor–solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III–V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III–V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

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“…This results in a dramatic decrease of the size of the produced devices and significant simplification of the fabrication process. Silicon NWs can be produced via the VLS technique by chemical vapor deposition, , electron-beam evaporation, molecular beam epitaxy, magnetron sputtering, and pulsed laser deposition , (PLD). Among these technologies, PLD is the most flexible one in terms of plasma energy range (10–100 eV) and growth speeds.…”

Section: Introductionmentioning

confidence: 99%

Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

et al. 2018

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We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor–liquid–solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu ≈ 60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I – V diode characteristics. Our approach can become an important new tool in the design of novel electronic components.

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Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE

Cited by 12 publications

References 37 publications

Thermal decomposition of GaAs nanowires

Thermal decomposition of GaAs nanowires

Understanding the vapor–liquid–solid growth and composition of ternary III–V nanowires and nanowire heterostructures

Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

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