Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

Kwietniewski, Norbert; Sochacki, Mariusz; Szmidt, J.; Guziewicz, M.; Kamińska, E.; Piotrowska, Anna

doi:10.1016/j.apsusc.2008.03.018

Cited by 23 publications

(18 citation statements)

References 33 publications

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“…The Richardson constant deviated by a decrease of almost three orders of magnitude from the theoretical value of 26.4 A/cm 2 ·K 2 for n-GaN. This can be explained by the spatially fluctuated barrier height in the contacts between the Au metal and a-plane GaN templates grown via GaN nanodot formation [ 27 , 28 ]. These results clearly suggest the formation of an inhomogeneity of Φ B on the Au/a-plane GaN templates grown via GaN nanodot formation, which can be attributed to the surface defects in nonpolar a-plane GaN [ 29 , 30 , 31 ].…”

Section: Resultsmentioning

confidence: 99%

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Lee

et al. 2018

Nanomaterials

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We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE) one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS) results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

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Section: Resultsmentioning

confidence: 99%

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Lee

et al. 2018

Nanomaterials

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“…Such a large discrepancy between the experimental and the theoretical values of the Richardson constant may be due to the spatial fluctuation of the barrier height in our contacts [18].…”

Section: Resultsmentioning

confidence: 97%

Forward Current Transport Mechanism of Cu Schottky Barrier Formed on n-type Ge Wafer

Kim

Jung

Kim

et al. 2015

Transactions on Electrical and Electronic Materials

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We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm .

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“…The Ag/MgPc/n-GaAs/Au-Ge Schottky diode exhibited very low series resistance due to the contributions of back contact Au-Ge, higher electron mobility of n-GaAs substrat, good conductivity of MgPc and also cleaning procedure can minimize the series resistance [27].…”

Section: Extraction Of Schottky Diode Parameters Under Dark Conditionsmentioning

confidence: 99%

A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

et al. 2015

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Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

Cited by 23 publications

References 33 publications

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Forward Current Transport Mechanism of Cu Schottky Barrier Formed on n-type Ge Wafer

A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

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