Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

Mochizuki, Kazuhiro; Nomoto, Kazuki; Hatakeyama, Yoshitomo; Katayose, H.; Mishima, Tomoyoshi; Kaneda, Naoki; Terano, Akihisa; Ishigaki, Takashi; Tsuchiya, R.; Nakamura, Tohru

doi:10.1109/ted.2012.2185241

Cited by 14 publications

(13 citation statements)

References 20 publications

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“…Crystal growth and device‐fabrication technologies of GaN devices are not as matured as those of Si and SiC; hence in‐depth investigations are still required. GaN fortunately is a direct energy‐band gap a semiconductor and strong electroluminescence (EL) occurs by recombination of electrons and holes under forward‐biased conditions, which leads considerable reduction of R on . The EL intensity is proportional to injected current; therefore, microscopic EL mapping can give information on local current distributions in the p–n junction plane.…”

Section: Introductionmentioning

confidence: 99%

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Hayashi

Ohta

Horikiri

et al. 2017

Physica Status Solidi (a)

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This paper presents electroluminescence intensity mapping on a p–n junction plane of vertical GaN diodes under forward‐biased conditions for the first time. By this mapping, it has been discovered that current crowding existed, corresponding to the naturally formed surface stripes on epitaxial layers grown on freestanding GaN substrates. Detailed analyses by AFM and TOF‐SIMS clarified that the concentration of doped Mg acceptors on one slope of the stripe was higher than that on the other slope. The higher Mg‐concentration region should have lower electric resistance, which would cause the current crowding. By improving the surface flatness, the current crowding was suppressed and a low specific on‐resistance was obtained.

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Section: Introductionmentioning

confidence: 99%

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Hayashi

Ohta

Horikiri

et al. 2017

Physica Status Solidi (a)

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“…In the simulation, contact resistivities of the anode and cathode electrodes were neglected, and τ of 58 ns and 5 µs were used, respectively, as a representative of practical IPR and almost infinite IPR. The former value was determined from the temperature‐dependence of high‐level injection current of non‐self‐aligned mesa‐type GaN p–n diodes , while the latter was chosen to be larger than the reported as‐grown τ of 4H‐SiC (i.e., 1.8 µs) . Other parameters used in the simulation were the same as those reported in Ref.…”

Section: Non‐self‐aligned Mesa‐type P–n Junctionmentioning

confidence: 99%

“…Measured forward‐current–voltage characteristics of GaN p–n diodes shown in Fig. (circles), together with characteristics simulated with minority‐carrier lifetime τ of 58 ns (solid line) and 5 µs (dashed line) .…”

Section: Non‐self‐aligned Mesa‐type P–n Junctionmentioning

confidence: 99%

“…Output current–density ( J )/voltage ( V ) characteristics of 600‐V‐class GaN bipolar junction transistor (BJT) simulated with (carrier lifetime τ = 58 ns and effective acceptor level E A eff = 0.14 eV) and without ( τ = 44 ns and E A eff = 0.16 eV) extrinsic photon recycling (EPR). Reported characteristics of 600 V 4H‐SiC BJT and 600 V 4H‐SiC trench metal–oxide–semiconductor field‐effect transistor (MOSFET) are also shown, together with a curve showing the power dissipation limit of a semiconductor package, 300 W cm −2 .…”

Section: Vertical Gan Bipolar Power Devicesmentioning

confidence: 99%

“…However, conventional photon‐recycling [hereinafter called “intrinsic photon‐recycling (IPR)”] itself cannot quantitatively explain the measured large J , which is discussed in Section 2.2. The proposed “extrinsic photon recycling (EPR)” is reviewed in Section 3 on the basis of indirect experimental evidence . In Section 4, vertical GaN bipolar power devices are discussed from the view point of gaining competitive advantage from EPR .…”

Section: Introductionmentioning

confidence: 99%

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Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Mochizuki

2016

Physica Status Solidi (a)

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It is shown that peripheral current Ip flows in non‐self‐aligned mesa‐type p–n diodes but that Ip flowing in GaN diodes cannot be explained by elongated minority‐carrier lifetime associated with intrinsic photon recycling (IPR), i.e., reabsorption of radiative recombination. Accordingly, possible increase in the ratio of deep Mg acceptors (energy level: EA) due to extrinsic photon recycling (EPR) is proposed, and the effect of EPR is expressed as an effective EA. Due to the limit on the power dissipation of a semiconductor package, EPR works effectively in the case of zero‐offset bipolar‐junction transistors, whose base doping level is limited in terms of emitter‐injection efficiency. Measured and simulated forward‐current–voltage characteristics of non‐self‐aligned mesa‐type GaN p–n diodes.

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Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D

Mochizuki

Ohta

Horikiri

et al. 2021

Physica Status Solidi (b)

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By eliminating the influence of surface recombination, the reported consideration that on‐resistance of GaN p+n diodes fabricated on free‐standing substrates should be limited by nonradiative recombination around dislocation lines is validated. The validation is based on analyses of 1) bulk nonradiative recombination current densities (Jnr), determined from the y intercept of forward‐current density/inverse of anode radius plots, of diodes fabricated on two kinds of vapor‐phase epitaxially grown freestanding substrates (i.e., maskless 3D [M‐3D, dislocation density Ndis ≤ 4 × 105 cm−2] and void‐assisted separation [VAS, Ndis = 1–4 × 106 cm−2]) and 2) distributions of two‐photon photoluminescence (2PPL) from an n‐GaN layer identifying dislocations as dark spots. Based on the extracted values of Jnr, the Shockley–Read–Hall lifetime of GaN p+n diodes on M‐3D and VAS substrates, and are, respectively, estimated to be 11 and 2 ns. Under the assumption of high excitation for the 2PPL measurement, the use of of 11 ns reproduces the 2PPL data with the effective dislocation radius ranging from 0.2 to 2 nm.

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Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

Cited by 14 publications

References 20 publications

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D

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