Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films

Abstract

In the present work, we report on the study of InGaP/Ge heterojunctions grown by metal organic vapor phase epitaxy at different growth temperatures, with the aim of analyzing properties of the layer and interface between InGaP epilayer and germanium substrate. Secondary Neutral Mass Spectroscopy, Rutherford Backscattering Spectrometry, High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy have been used to characterize the layers. The main goal of this work is to get information about diffusion processes of Ga, In, P in the substrate and of Ge in the epitaxial film. Since the interface roughness during sputtering and the effect of diffusion depends on the growth temperature, depth profiles measured experimentally were combined with surface roughness data in order to get more reliable information about diffusion profiles and the real depth distribution of elements in the interface. which negatively affects the device performance. 45In the present paper, we performed the study of InGaP/Ge thin films 52Experimental 53 The InGaP films were grown on Ge (001) introduction of the precursors into the reactor chamber. In order to 62 obtain the same composition for all the samples, the ratio of In/Ga 63 was varied from 1.1 to 1.4, while the ratio of V/III groups elements 64 ranged from 95 to 87. The InGaP was not intentionally doped.

Diffusion induced atomic islands on the surface of Ni/Cu nanolayers

“…experiments. While the surface roughness determined the depth resolution [18], the crater shape gave information about the lateral homogeneity of the ion bombardment. The high detection sensitivity of SNMS gave a possibility to measure the depth distribution of diffusant atoms along short-circuits, i.e.…”

First-Principles Calculations of Band Offsets at Heterovalent ε - Ge/InxAl1−xAsGreene‐Diniz1, Grüning2 2018Phys. Rev. Applied3100View full textAdd to dashboardCite

“…a III-Vs grown on Ge) such as GaAs/Ge(001). To a certain extent this diffusion and the overall interface quality can be controlled by growth conditions, [65][66][67][68][69] as well as by thin interlayers of AlAs (or alloys thereof) between GaAs and Ge. 57,[70][71][72] The latter technique can decrease interdiffusion due to the large Al-As bond energy and yield heterostructures with very sharp interfaces between the III-V region and Ge.…”

Electrical properties of CuO/ZnO heterojunctions prepared by spray pyrolysis

“…The mean value of the surface roughness is 24.03 and 2.78 nm for CuO and ZnO respectively. The surface roughness plays an important role in the interface state formation in the heterojunction [19,20].…”